PD - 94727B
IRF6608
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Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
HEXFET
®
Power MOSFET
V
DSS
30V
R
DS(on)
max
9.0mΩ@V
GS
= 10V
11mΩ@V
GS
= 4.5V
Qg
16nC
ST
Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details)
SQ
SX
ST
MQ
MX
MT
DirectFET ISOMETRIC
Description
The IRF6608 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to
achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and
processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous
best thermal resistance by 80%.
The IRF6608 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest
generation of processors operating at higher frequencies. The IRF6608 has been optimized for parameters that are critical in
synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6608 has been
optimized for parameters that are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in
the control FET socket.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
c
Power Dissipation
g
Power Dissipation
g
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
±12
55
13
10
100
2.1
1.4
42
0.017
-40 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
fj
Junction-to-Ambient
gj
Junction-to-Ambient
hj
Junction-to-Case
ij
Junction-to-PCB Mounted
Typ.
–––
12.5
20
–––
1.0
Max.
58
–––
–––
3.0
–––
Units
°C/W
Notes
through
are on page 2
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1
3/31/04
IRF6608
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
30
–––
–––
–––
1.0
–––
–––
–––
–––
–––
28
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
29
7.0
8.0
–––
-5.4
–––
–––
–––
–––
–––
16
4.6
1.4
5.3
4.7
6.7
11
13
12
16
3.4
2120
440
260
–––
–––
9.0
11
3.0
–––
30
100
100
-100
–––
24
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 15V
ns
nC
nC
V
DS
= 15V
V
GS
= 4.5V
I
D
= 8.8A
S
nA
V
mV/°C
µA
V
Conditions
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 13A
e
V
GS
= 4.5V, I
D
= 10A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 12V
V
GS
= -12V
V
DS
= 15V, I
D
= 8.8A
See Fig. 16
V
DS
= 15V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
e
I
D
= 8.8A
Clamped Inductive Load
ƒ = 1.0MHz
Avalanche Characteristics
E
AS
I
AR
E
AR
Parameter
Single Pulse Avalanche Energyd
Avalanche Current
c
Repetitive Avalanche Energy
c
Typ.
–––
–––
–––
Max.
54
8.8
0.21
Units
mJ
A
mJ
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
0.94
31
33
13
A
100
1.2
47
50
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
c
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
p-n junction diode.
T
J
= 25°C, I
S
= 8.8A, V
GS
= 0V
e
T
J
= 25°C, I
F
= 8.8A
di/dt = 100A/µs
e
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 1.38mH
R
G
= 25Ω, I
AS
= 8.8A.
Pulse width
≤
400µs; duty cycle
≤
2%.
Surface mounted on 1 in. square Cu board.
Used double sided cooling, mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
T
C
measured with thermal couple mounted to top (Drain) of part.
R
θ
is measured at
T
J
of approximately 90°C.
2
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IRF6608
100
TOP
VGS
10V
7.0V
4.5V
3.8V
3.5V
3.2V
2.9V
2.7V
100
ID, Drain-to-Source Current (A)
BOTTOM
ID, Drain-to-Source Current (A)
2.7V
10
TOP
VGS
10V
7.0V
4.5V
3.8V
3.5V
3.2V
2.9V
2.7V
10
2.7V
30µs PULSE WIDTH
Tj = 25°C
1
BOTTOM
30µs PULSE WIDTH
Tj = 150°C
10.0
100.0
1
0.1
1.0
10.0
100.0
0.1
1.0
Fig 1.
Typical Output Characteristics
100.0
Fig 2.
Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
ID = 12A
VGS = 10V
ID, Drain-to-Source Current
(Α)
T J = 150°C
1.5
T J = 25°C
10.0
(Normalized)
1.0
VDS = 20V
30µs PULSE WIDTH
1.0
2.5
2.8
3.0
3.3
3.5
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance vs. Temperature
12
ID= 8.8A
VGS, Gate-to-Source Voltage (V)
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
10
8
6
4
2
0
VDS= 24V
VDS= 15V
C, Capacitance (pF)
Ciss
1000
Coss
Crss
100
1
10
100
0
10
20
30
40
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRF6608
100.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
10.0
T J = 150°C
ID, Drain-to-Source Current (A)
100
10
100µsec
T J = 25°C
1.0
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0
1
10
10msec
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-toDrain Voltage (V)
0.1
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
60
2.2
Fig 8.
Maximum Safe Operating Area
VGS(th) Gate threshold Voltage (V)
50
2.0
1.8
1.6
1.4
1.2
1.0
0.8
ID , Drain Current (A)
40
ID = 250µA
30
20
10
0
25
50
75
100
125
150
-75
-50
-25
0
25
50
75
100
125
150
T J , Junction Temperature (°C)
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
100
Fig 10.
Threshold Voltage vs. Temperature
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
1
0.02
0.01
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
τ
4
Ri (°C/W)
2.023
19.48
21.78
14.71
τi
(sec)
0.000678
0.240237
2.0167
58
0.1
τ
1
τ
2
τ
3
τ
4
Ci=
τi/Ri
Ci i/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
0.01
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRF6608
R DS(on) , Drain-to -Source On Resistance (
Ω)
EAS, Single Pulse Avalanche Energy (mJ)
0.025
240
200
0.020
ID
TOP
3.3A
3.8A
BOTTOM
8.8A
160
0.015
120
80
0.010
ID = 12A
40
0.005
3
4
5
6
7
8
9
10
0
25
50
75
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J, Junction Temperature (°C)
Fig 12.
On-Resistance Vs. Gate Voltage
Fig 13c.
Maximum Avalanche Energy Vs. Drain Current
15V
L
D
V
DS
DRIVER
VDS
L
+
V
DD
-
RG
V
GS
20V
D.U.T
IAS
tp
+
V
- DD
A
D.U.T
V
GS
Pulse Width < 1µs
Duty Factor < 0.1%
0.01
Ω
Fig 13a.
Unclamped Inductive Test Circuit
V
(BR)DSS
tp
Fig 14a.
Switching Time Test Circuit
V
DS
90%
10%
V
GS
I
AS
t
d(on)
t
r
t
d(off)
t
f
Fig 13b.
Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Fig 14b.
Switching Time Waveforms
Id
Vds
Vgs
50KΩ
12V
.2µF
.3µF
D.U.T.
V
GS
3mA
+
V
-
DS
Vgs(th)
I
G
I
D
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
Fig 15.
Gate Charge Test Circuit
Fig 16.
Gate Charge Waveform
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