FR40D02 datasheet, PDF - EEWORLD Datasheet

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FR40D02: DescriptionSilicon Fast Recovery Diode; CategoryDiscrete semiconductor diode; File Size664KB，3 Pages; ManufacturerGeneSiC; Websitehttp://www.genesicsemi.com/

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FR40D02 Overview

Silicon Fast Recovery Diode

FR40D02 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Maker	GeneSiC
package instruction	O-MUPM-D1
Reach Compliance Code	compli
ECCN code	EAR99
application	FAST RECOVERY
Shell connection	CATHODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.4 V
JEDEC-95 code	DO-5
JESD-30 code	O-MUPM-D1
Maximum non-repetitive peak forward current	500 A
Number of components	1
Phase	1
Number of terminals	1
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Maximum output current	40 A
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Maximum repetitive peak reverse voltage	200 V
Maximum reverse current	25 µA
Maximum reverse recovery time	0.2 µs
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	UPPER
Base Number Matches	1

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FR40B02 thru FR40JR02

Silicon Fast

Recovery Diode

Features

• High Surge Capability

• Types from 100 V to 600 V V

RRM

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

2. Reverse polarity (R): Stud is anode.

3. Stud is base.

DO-5 Package

V

RRM

= 100 V - 600 V

I

F

= 40 A

Maximum ratings, at T

j

= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Parameter

Repetitive peak reverse

voltage

RMS reverse voltage

DC blocking voltage

Continuous forward current

Surge non-repetitive forward

current, Half Sine Wave

Operating temperature

Storage temperature

Symbol

V

RRM

V

RMS

V

DC

I

F

I

F,SM

T

j

T

stg

T

C

≤

100 °C

T

C

= 25 °C, t

p

= 8.3 ms

Conditions

FR40B(R)02

100

70

100

40

500

-55 to 150

FR40D(R)02

200

140

200

40

500

-55 to 150

FR40G(R)02

400

280

400

40

500

-55 to 150

FR40J(R)02

600

420

600

40

500

-55 to 150

Unit

V

A

°C

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Diode forward voltage

Reverse current

Symbol

V

F

I

R

Conditions

I

F

= 40 A, T

j

= 25 °C

V

R

= 100 V, T

j

= 25 °C

V

R

= 100 V, T

j

= 125 °C

I

F

=0.5 A, I

R

=1.0 A,

I

RR

= 0.25 A

FR40B(R)02

1.0

25

10

FR40D(R)02

1.0

25

10

FR40G(R)02

1.0

25

10

FR40J(R)02

1.0

25

10

Unit

V

μA

mA

Recovery Time

Maximum reverse recovery

time

T

RR

200

250

nS

Thermal characteristics

Thermal resistance, junction

- case

R

thJC

0.8

°C/W

www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/

1

FR40D02 Related Products

	FR40D02	FR40B02
Description	Silicon Fast Recovery Diode	Silicon Fast Recovery Diode
Is it lead-free?	Lead free	Lead free
Maker	GeneSiC	GeneSiC
package instruction	O-MUPM-D1	O-MUPM-D1
Reach Compliance Code	compli	compli
ECCN code	EAR99	EAR99
application	FAST RECOVERY	FAST RECOVERY
Shell connection	CATHODE	CATHODE
Configuration	SINGLE	SINGLE
Diode component materials	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.4 V	1.4 V
JEDEC-95 code	DO-5	DO-5
JESD-30 code	O-MUPM-D1	O-MUPM-D1
Maximum non-repetitive peak forward current	500 A	500 A
Number of components	1	1
Phase	1	1
Number of terminals	1	1
Maximum operating temperature	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C
Maximum output current	40 A	40 A
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	POST/STUD MOUNT	POST/STUD MOUNT
Maximum repetitive peak reverse voltage	200 V	100 V
Maximum reverse current	25 µA	25 µA
Maximum reverse recovery time	0.2 µs	0.2 µs
surface mount	NO	NO
Terminal form	SOLDER LUG	SOLDER LUG
Terminal location	UPPER	UPPER

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