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FR40B02

Description
Silicon Fast Recovery Diode
CategoryDiscrete semiconductor    diode   
File Size664KB,3 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
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FR40B02 Overview

Silicon Fast Recovery Diode

FR40B02 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerGeneSiC
package instructionO-MUPM-D1
Reach Compliance Codecompli
ECCN codeEAR99
applicationFAST RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.4 V
JEDEC-95 codeDO-5
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current500 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Maximum output current40 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Maximum repetitive peak reverse voltage100 V
Maximum reverse current25 µA
Maximum reverse recovery time0.2 µs
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
FR40B02 thru FR40JR02
Silicon Fast
Recovery Diode
Features
• High Surge Capability
• Types from 100 V to 600 V V
RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
DO-5 Package
V
RRM
= 100 V - 600 V
I
F
= 40 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
I
F,SM
T
j
T
stg
T
C
100 °C
T
C
= 25 °C, t
p
= 8.3 ms
Conditions
FR40B(R)02
100
70
100
40
500
-55 to 150
-55 to 150
FR40D(R)02
200
140
200
40
500
-55 to 150
-55 to 150
FR40G(R)02
400
280
400
40
500
-55 to 150
-55 to 150
FR40J(R)02
600
420
600
40
500
-55 to 150
-55 to 150
Unit
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 40 A, T
j
= 25 °C
V
R
= 100 V, T
j
= 25 °C
V
R
= 100 V, T
j
= 125 °C
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
FR40B(R)02
1.0
25
10
FR40D(R)02
1.0
25
10
FR40G(R)02
1.0
25
10
FR40J(R)02
1.0
25
10
Unit
V
μA
mA
Recovery Time
Maximum reverse recovery
time
T
RR
200
200
200
250
nS
Thermal characteristics
Thermal resistance, junction
- case
R
thJC
0.8
0.8
0.8
0.8
°C/W
www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
1

FR40B02 Related Products

FR40B02 FR40D02
Description Silicon Fast Recovery Diode Silicon Fast Recovery Diode
Is it lead-free? Lead free Lead free
Maker GeneSiC GeneSiC
package instruction O-MUPM-D1 O-MUPM-D1
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
application FAST RECOVERY FAST RECOVERY
Shell connection CATHODE CATHODE
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.4 V 1.4 V
JEDEC-95 code DO-5 DO-5
JESD-30 code O-MUPM-D1 O-MUPM-D1
Maximum non-repetitive peak forward current 500 A 500 A
Number of components 1 1
Phase 1 1
Number of terminals 1 1
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C
Maximum output current 40 A 40 A
Package body material METAL METAL
Package shape ROUND ROUND
Package form POST/STUD MOUNT POST/STUD MOUNT
Maximum repetitive peak reverse voltage 100 V 200 V
Maximum reverse current 25 µA 25 µA
Maximum reverse recovery time 0.2 µs 0.2 µs
surface mount NO NO
Terminal form SOLDER LUG SOLDER LUG
Terminal location UPPER UPPER
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