Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3PN package
・Built-in
damper diode
・High
breakdown voltage
APPLICATIONS
・Character
display horizontal
deflection output
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SC4742
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CEO
V
EBO
I
C
I
C(peak)
I
C(surge)
Io
P
C
T
j
T
stg
PARAMETER
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector current-surge
C to E diode forward current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open base
Open collector
CONDITIONS
VALUE
1500
6
6
7
16
7
50
150
-55~150
UNIT
V
V
A
A
A
A
W
℃
℃
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC4742
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)EBO
I
CES
h
FE
V
CE(sat)
V
BE(sat)
V
ECF
t
f
PARAMETER
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Diode forward voltage
Fall time
CONDITIONS
I
E
=400mA ;I
C
=0
V
CE
=1500V; R
BE
=0
I
C
=1A ; V
CE
=5V
I
C
=5A ; I
B
=1.25A
I
C
=5A ; I
B
=1.25A
I
F
=6A
I
CP
=5A;
I
B1
=1A;I
B2
=-2A
MIN
6
0.5
25
2.0
1.5
2.0
0.4
V
V
V
μs
TYP.
MAX
UNIT
V
mA
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4742
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
JMnic
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