Product Specification
Silicon NPN Power Transistor
2SC2166
DESCRIPTION
・High
Power Gain-
: G
pe
≥
13.8dB @f= 27MHz, P
O
= 6W; V
CC
= 12V
・High
Reliability
APPLICATIONS
・Designed
for 3 to 4 watts output power amplifiers in HF band
mobile radio applications.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CBO
V
CER
V
EBO
I
C
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage R
BE
= 10Ω
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
@T
C
=25℃
P
C
Collector Power Dissipation
@T
a
=25℃
T
j
T
stg
Junction Temperature
Storage Temperature Range
1.5
150
-55~150
℃
℃
VALUE
45
45
4
4
12.5
W
UNIT
V
V
V
A
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-c
PARAMETER
Thermal Resistance,Junction to Ambient
Thermal Resistance,Junction to Case
MAX
83
10
UNIT
℃/W
℃/W
Website：www.jmnic.com
Product Specification
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC2166
TYP.
MAX
UNIT
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 1mA, I
E
= 0
45
V
V
(BR)CER
Collector-Emitter Breakdown Voltage
I
C
= 10mA; R
BE
= 10Ω
45
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 1mA, I
C
= 0
4
V
I
CBO
Collector Cutoff Current
V
CB
= 30V; I
E
= 0
0.1
mA
I
EBO
Emitter Cutoff Current
V
EB
= 3V; I
C
= 0
0.1
mA
h
FE
DC Current Gain
I
C
= 0.1A; V
CE
= 10V
35
180
P
O
Output Power
V
CC
= 12V; P
in
= 0.25W;
f= 27MHz
6
7.5
W
η
C
Collector Efficiency
55
60
%
Website：www.jmnic.com
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