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2SB514_2014

Description
Silicon PNP Power Transistors
File Size45KB,3 Pages
ManufacturerJinmei
Websitehttp://www.jmnic.com/
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2SB514_2014 Overview

Silicon PNP Power Transistors

JMnic
Product Specification
Silicon PNP Power Transistors
2SB514
DESCRIPTION
・With
TO-220C package
・Complement
to type 2SD330
・Low
collector saturation voltage
APPLICATIONS
・Suited
for use in output stage of 10W
AF power amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
T
a
=25℃
P
C
Collector dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
20
150
-50~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-50
-50
-5
-2
-5
1.75
W
UNIT
V
V
V
A
A

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