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IRF3704ZPBF

Description
42 A, 20 V, 0.0079 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size361KB,13 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRF3704ZPBF Overview

42 A, 20 V, 0.0079 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

IRF3704ZPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)36 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)67 A
Maximum drain current (ID)42 A
Maximum drain-source on-resistance0.0079 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)57 W
Maximum pulsed drain current (IDM)260 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrie
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Applications
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
l
Lead-Free
HEXFET
®
Power MOSFET
IRF3704ZPbF
IRF3704ZSPbF
IRF3704ZLPbF
Qg
8.7nC
7.9m
:
PD - 95463
V
DSS
R
DS(on)
max
20V
Benefits
l
Low R
DS(on)
at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF3704Z
D
2
Pak
IRF3704ZS
TO-262
IRF3704ZL
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
20
± 20
67
260
57
28
0.38
-55 to + 175
300 (1.6mm from case)
10 lbf in (1.1N m)
Units
V
A
™
h
47
h
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
W
W/°C
°C
Thermal Resistance
R
θJC
R
θCS
R
θJA
R
θJA
f
y
y
Parameter
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
i
Typ.
Max.
2.65
–––
62
40
Units
°C/W
fiÃ
f
–––
0.50
–––
–––
gi
Notes

through
‡
are on page 12
www.irf.com
1
6/29/04

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Description 42 A, 20 V, 0.0079 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 42 A, 20 V, 0.0079 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 42 A, 20 V, 0.0079 ohm, N-CHANNEL, Si, POWER, MOSFET 42 A, 20 V, 0.0079 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Shell connection DRAIN DRAIN DRAIN DRAIN
Number of components 1 1 1 1
Number of terminals 3 3 2 3
Terminal form THROUGH-HOLE THROUGH-HOLE GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Is it lead-free? Lead free Lead free Lead free -
Is it Rohs certified? conform to conform to conform to -
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) -
package instruction FLANGE MOUNT, R-PSFM-T3 LEAD FREE, PLASTIC, TO-262, 3 PIN LEAD FREE, PLASTIC, D2PAK-3 -
Contacts 3 3 3 -
Reach Compliance Code unknow _compli _compli -
ECCN code EAR99 EAR99 EAR99 -
Avalanche Energy Efficiency Rating (Eas) 36 mJ 36 mJ 36 mJ -
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Minimum drain-source breakdown voltage 20 V 20 V 20 V -
Maximum drain current (Abs) (ID) 67 A 67 A 67 A -
Maximum drain current (ID) 42 A 42 A 42 A -
Maximum drain-source on-resistance 0.0079 Ω 0.0079 Ω 0.0079 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JESD-30 code R-PSFM-T3 R-PSIP-T3 R-PSSO-G2 -
JESD-609 code e3 e3 e3 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE -
Maximum operating temperature 150 °C 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR -
Package form FLANGE MOUNT IN-LINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) 260 260 260 -
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL -
Maximum power dissipation(Abs) 57 W 57 W 57 W -
Maximum pulsed drain current (IDM) 260 A 260 A 260 A -
Certification status Not Qualified Not Qualified Not Qualified -
surface mount NO NO YES -
Terminal surface Matte Tin (Sn) - with Nickel (Ni) barrie Matte Tin (Sn) - with Nickel (Ni) barrie Matte Tin (Sn) - with Nickel (Ni) barrie -
Maximum time at peak reflow temperature 30 30 30 -
Resistance data of six materials
Resistance data of six materials...
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