IRF3704ZLPBF datasheet, PDF - EEWORLD Datasheet

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IRF3704ZLPBF: Description42 A, 20 V, 0.0079 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size361KB，13 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRF3704ZLPBF Overview

42 A, 20 V, 0.0079 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

IRF3704ZLPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-262AA
package instruction	LEAD FREE, PLASTIC, TO-262, 3 PIN
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	36 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (Abs) (ID)	67 A
Maximum drain current (ID)	42 A
Maximum drain-source on-resistance	0.0079 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-262AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	57 W
Maximum pulsed drain current (IDM)	260 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrie
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

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Applications

High Frequency Synchronous Buck

Converters for Computer Processor Power

Lead-Free

HEXFET

Power MOSFET

IRF3704ZPbF

IRF3704ZSPbF

IRF3704ZLPbF

8.7nC

7.9m

PD - 95463

DSS

DS(on)

max

20V

Benefits

Low R

DS(on)

at 4.5V V

Ultra-Low Gate Impedance

Fully Characterized Avalanche Voltage

and Current

TO-220AB

IRF3704Z

Pak

IRF3704ZS

TO-262

IRF3704ZL

Absolute Maximum Ratings

Parameter

@ T

= 25°C

@ T

= 100°C

= 25°C

= 100°C

STG

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

Max.

± 20

260

0.38

-55 to + 175

300 (1.6mm from case)

10 lbf in (1.1N m)

Units

Maximum Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

W/°C

°C

Thermal Resistance

θJC

θCS

θJA

Parameter

Junction-to-Case

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount)

Typ.

Max.

2.65

–––

Units

°C/W

fiÃ

–––

0.50

–––

Notes

through

are on page 12

www.irf.com

6/29/04

IRF3704ZLPBF Related Products

	IRF3704ZLPBF	IRF3704ZPBF	IRF3704ZSPBF	IRF3704ZPBF_15
Description	42 A, 20 V, 0.0079 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	42 A, 20 V, 0.0079 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	42 A, 20 V, 0.0079 ohm, N-CHANNEL, Si, POWER, MOSFET	42 A, 20 V, 0.0079 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Number of components	1	1	1	1
Number of terminals	3	3	2	3
Terminal form	THROUGH-HOLE	THROUGH-HOLE	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Is it lead-free?	Lead free	Lead free	Lead free	-
Is it Rohs certified?	conform to	conform to	conform to	-
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	-
package instruction	LEAD FREE, PLASTIC, TO-262, 3 PIN	FLANGE MOUNT, R-PSFM-T3	LEAD FREE, PLASTIC, D2PAK-3	-
Contacts	3	3	3	-
Reach Compliance Code	_compli	unknow	_compli	-
ECCN code	EAR99	EAR99	EAR99	-
Avalanche Energy Efficiency Rating (Eas)	36 mJ	36 mJ	36 mJ	-
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-
Minimum drain-source breakdown voltage	20 V	20 V	20 V	-
Maximum drain current (Abs) (ID)	67 A	67 A	67 A	-
Maximum drain current (ID)	42 A	42 A	42 A	-
Maximum drain-source on-resistance	0.0079 Ω	0.0079 Ω	0.0079 Ω	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
JESD-30 code	R-PSIP-T3	R-PSFM-T3	R-PSSO-G2	-
JESD-609 code	e3	e3	e3	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Maximum operating temperature	150 °C	150 °C	150 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	IN-LINE	FLANGE MOUNT	SMALL OUTLINE	-
Peak Reflow Temperature (Celsius)	260	260	260	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	-
Maximum power dissipation(Abs)	57 W	57 W	57 W	-
Maximum pulsed drain current (IDM)	260 A	260 A	260 A	-
Certification status	Not Qualified	Not Qualified	Not Qualified	-
surface mount	NO	NO	YES	-
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrie	Matte Tin (Sn) - with Nickel (Ni) barrie	Matte Tin (Sn) - with Nickel (Ni) barrie	-
Maximum time at peak reflow temperature	30	30	30	-

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