JMnic
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3PN package
・High
breakdown voltage
・High
reliability
・Fast
speed
APPLICATIONS
・Ultrahigh-definition
CRT display horizontal
deflection output applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SC3685
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-pulse
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
800
6
6
16
125
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3685
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=100mA; I
B
=0
800
V
V
CEsat
Collector-emitter saturation voltage
I
C
=4A ;I
B
=1A
5
V
V
BEsat
Base-emitter saturation voltage
I
C
=4A ;I
B
=1A
1.5
V
I
CES
Collector cut-off current
V
CE
=1500V; R
BE
=0
1
mA
I
EBO
Emitter cut-off current
V
EB
=4V; I
C
=0
1
mA
h
FE
DC current gain
I
C
=1A ; V
CE
=5V
8
Switching times
μs
t
stg
Storage time
I
C
=4A;I
B1
=0.8A; I
B2
=-1.6A
V
CC
=200V
3.0
t
f
Fall time
0.1
0.2
μs
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3685
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3685
4
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