AP4034ASGYT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Good Recovery Time
▼
Small Size & Lower Profile
▼
RoHS Compliant & Halogen-Free
S
D
N-CHANNEL MOSFET WITH SCHOTTKY
DIODE
G
Schottky Diode
BV
DSS
R
DS(ON)
I
D
D
30V
7.2mΩ
17.5A
Description
AP4034A series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The PMPAK 3x3 package is special for voltage conversion application
using standard infrared reflow technique with the backside heat sink to
achieve the good thermal performance.
®
D
D
D
S
S
S
G
PMPAK
®
3x3
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
V
KA
I
F
@T
A
=25℃
I
FM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Schottky Reverse Voltage
Continous Forward Current
Pulsed Diode Forward Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
17.5
14
60
30
1
25
3.57
-55 to 150
-55 to 150
Units
V
V
A
A
A
V
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
3
Value
5
35
Unit
℃/W
℃/W
1
201203141
Data and specifications subject to change without notice
AP4034ASGYT-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=12A
V
GS
=4.5V, I
D
=8A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=12A
V
DS
=24V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=12A
V
DS
=15V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=15V
f=1.0MHz
f=1.0MHz
Min.
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
5.8
8.2
1.4
29
-
-
17
4.5
7.5
10
5
32
7.5
230
170
1.1
Max. Units
-
7.2
10.8
3
-
100
+100
27
-
-
-
-
-
-
-
-
2.2
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
2000 3200
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Body Diode+Schottky Reverse Recovery Time
I
S
=12A,
Body Diode+Schottky Reverse Recovery Charge
Test Conditions
Min.
-
-
-
Typ.
0.48
22
15
Max. Units
0.5
-
-
V
ns
nC
Diode+Schottky Forward On Voltage
2
I
S
=1.0A, V
GS
=0V
V
GS
=0
V
,
dI/dt=100A/µs
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
2oz copper pad of FR4 board, t <10sec, 160
o
C/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4034ASGYT-HF
60
50
T
A
=25 C
50
o
I
D
, Drain Current (A)
40
I
D
, Drain Current (A)
10V
7.0V
6.0V
5.0V
V
G
= 4.0V
T
A
= 150
o
C
40
10V
7.0V
6.0V
5.0V
V
G
= 4.0V
30
30
20
20
10
10
0
0
1
2
3
4
0
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
1.8
I
D
=8A
T
A
=25
℃
9
1.6
I
D
=12A
V
G
=10V
Normalized R
DS(ON)
2
4
6
8
10
1.4
R
DS(ON)
(m
Ω
)
8
1.2
7
1.0
6
0.8
5
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
8
I
D
=10mA
1.6
6
Normalized V
GS(th)
I
S
(A)
1.2
T
j
=150
o
C
4
T
j
=25
o
C
0.8
2
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4034ASGYT-HF
10
3200
f=1.0MHz
I
D
= 12 A
V
DS
=15V
V
GS
, Gate to Source Voltage (V)
8
2400
6
C (pF)
C
iss
1600
4
800
2
0
0
10
20
30
40
0
1
5
9
13
17
21
25
C
oss
C
rss
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Operation in this
area limited by
R
DS(ON)
10
Normalized Thermal Response (R
thja
)
Duty factor=0.5
0.2
100us
1ms
0.1
0.1
I
D
(A)
0.05
1
10ms
100ms
0.02
0.01
P
DM
0.01
t
T
Single Pulse
0.1
1s
T
A
=25 C
Single Pulse
o
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thia
=160
℃/W
DC
0.001
1
10
100
0.0001
0.001
0.01
0.1
1
0.01
0.01
0.1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
60
20
V
DS
=5V
50
16
I
D
, Drain Current (A)
40
I
D
, Drain Current (A)
T
j
=25
o
C
T
j
= -40
o
C
12
30
8
20
T
j
=150
o
C
10
4
0
0
1
2
3
4
5
0
25
50
75
100
125
150
V
GS
, Gate-to-Source Voltage (V)
T
A
, Ambient Temperature ( C )
o
Fig 11. Transfer Characteristics
Fig 12. Maximum Continuous Drain Current
v.s. Ambient Temperature
4
京公网安备 11010802033920号
EEWORLD
