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S1A

Description
1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AA
CategoryDiscrete semiconductor    diode   
File Size81KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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S1A Overview

1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AA

S1A Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerVishay
package instructionR-PDSO-C2
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PDSO-C2
JESD-609 codee0
Maximum non-repetitive peak forward current40 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
surface mountYES
Terminal surfaceTIN LEAD
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
S1A thru S1M
www.vishay.com
Vishay General Semiconductor
Surface Mount Glass Passivated Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DO-214AC (SMA)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
E
AS
I
R
V
F
T
J
max.
1.0 A
50 V to 1000 V
40 A, 30 A
5 mJ
1.0 μA, 5.0 μA
1.1 V
150 °C
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive, and telecommunication.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Non-repetitive peak reverse avalanche energy
at 25 °C, I
AS
= 1 A, L = 10 mH
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
E
AS
T
J
, T
STG
40
5
- 55 to + 150
SYMBOL
S1A
SA
50
35
50
S1B
SB
100
70
100
S1D
SD
200
140
200
S1G
SG
400
280
400
1.0
30
S1J
SJ
600
420
600
S1K
SK
800
560
800
S1M
SM
1000
700
1000
V
V
V
A
A
mJ
°C
UNIT
Revision: 11-Dec-12
Document Number: 88711
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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S1A S1GA-E3
Description 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AA 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AA
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE SIGNAL DIODE
Number of components 1 1
Number of terminals 2 2
Maximum repetitive peak reverse voltage 50 V 50 V
surface mount YES Yes
Terminal form C BEND C BEND
Terminal location DUAL DUAL
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