EEWORLDEEWORLDEEWORLD

Part Number

Search

S1GA-E3

Description
1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size81KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

S1GA-E3 Overview

1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AA

S1GA-E3 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC, SMB, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingNOT SPECIFIED
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Diode component materialsSILICON
Diode typeSIGNAL DIODE
Maximum repetitive peak reverse voltage50 V
Maximum average forward current1 A
S1A thru S1M
www.vishay.com
Vishay General Semiconductor
Surface Mount Glass Passivated Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DO-214AC (SMA)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
E
AS
I
R
V
F
T
J
max.
1.0 A
50 V to 1000 V
40 A, 30 A
5 mJ
1.0 μA, 5.0 μA
1.1 V
150 °C
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive, and telecommunication.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Non-repetitive peak reverse avalanche energy
at 25 °C, I
AS
= 1 A, L = 10 mH
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
E
AS
T
J
, T
STG
40
5
- 55 to + 150
SYMBOL
S1A
SA
50
35
50
S1B
SB
100
70
100
S1D
SD
200
140
200
S1G
SG
400
280
400
1.0
30
S1J
SJ
600
420
600
S1K
SK
800
560
800
S1M
SM
1000
700
1000
V
V
V
A
A
mJ
°C
UNIT
Revision: 11-Dec-12
Document Number: 88711
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

S1GA-E3 Related Products

S1GA-E3 S1A
Description 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AA 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AA
Number of terminals 2 2
Number of components 1 1
surface mount Yes YES
Terminal form C BEND C BEND
Terminal location DUAL DUAL
Diode component materials SILICON SILICON
Diode type SIGNAL DIODE RECTIFIER DIODE
Maximum repetitive peak reverse voltage 50 V 50 V

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2884  991  2247  2345  350  59  20  46  48  8 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号