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TP0604N3-GP014

Description
P-Channel Enhancement-Mode Vertical DMOS FET
Categoryunclassified   
File Size575KB,5 Pages
ManufacturerSUTEX
Websitehttp://www.supertex.com/
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TP0604N3-GP014 Overview

P-Channel Enhancement-Mode Vertical DMOS FET

Supertex inc.
P-Channel Enhancement-Mode
Vertical DMOS FET
Features
Low threshold (-2.4V max.)
High input impedance
Low input capacitance (95pF typical)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
TP0604
General Description
Applications
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Part Number
TP0604N3-G
TP0604N3-G P002
TP0604N3-G P003
TP0604N3-G P005
TP0604N3-G P013
TP0604N3-G P014
TP2404NW
TP2404NJ
TP2404ND
Die in wafer form
Die on adhesive tape
Die in waffle pack
---
---
---
3-Lead TO-92
2000/Reel
Package Option
3-Lead TO-92
Packing
1000/Bag
Product Summary
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max) (Ω)
I
D(ON)
(min) (A)
(max) (V)
V
GS(th)
-2.4
-40
2.0
-2.0
Pin Configuration
DRAIN
SOURCE
GATE
For packaged products, -G indicates package is RoHS compliant (‘Green’).
TO-92 taping specifications and winding styles per EIA-468 Standard.
Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specification VF57 for layout and dimensions.
TO-92 (N3)
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
Product Marking
Si TP
0 6 0 4
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92 (N3)
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Doc.# DSFP-TP0604
C082012
Supertex inc.
www.supertex.com

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TP0604N3-GP014 TP0604N3-G TP0604N3-GP002 TP0604N3-GP013 TP2404ND TP2404NJ TP0604N3-GP003 TP0604N3-GP005 TP2404NW
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