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SSF7504

Description
Advanced trench process technology
File Size393KB,5 Pages
ManufacturerSILIKRON
Websitehttp://www.silikron.com
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SSF7504 Overview

Advanced trench process technology

SSF7504
Feathers:
Advanced trench process technology
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Avalanche Energy 100% test
Description:
The SSF7504 is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the cell density
and reduces the on-resistance; its typical Rdson can reduce
to 2.7mohm.
Application:
Power switching application
SSF7504 TOP View (TO220)
ID=220A
BV=75V
Rdson=2.7mΩ(typ.)
Absolute Maximum Ratings
Parameter
I
D
@T
c
=25ْ C
I
D
@T
c
=100ْC
I
DM
P
D
@T
C
=25ْC
V
GS
dv/dt
E
AS
E
AR
T
J
T
STG
Continuous drain current,VGS@10V
Continuous drain current,VGS@10V
Pulsed drain current
Power dissipation
Linear derating factor
Gate-to-Source voltage
Peak diode recovery voltage
Single pulse avalanche energy
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
Max.
220
170
880
370
2.0
±20
20
960
TBD
–55 to +175
ْ
C
W
W/ْ C
V
v/ns
mJ
A
Units
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-case
Junction-to-ambient
Min.
Typ.
0.41
Max.
62
Units
ْ
C/W
Electrical Characteristics @TJ=25ْ C(unless otherwise specified)
Parameter
BV
DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Forward transconductance
Drain-to-Source leakage current
2010.5.2
Min.
75
2.0
Typ.
2.7
3.1
65
Max. Units
4
4.0
10
50
μA
V
mΩ
V
S
Test Conditions
V
GS
=0V,I
D
=250μA
V
GS
=10V,I
D
=40A
V
DS
=V
GS
,I
D
=250μA
V
DS
=5V,I
D
=30A
V
DS
=80V,V
GS
=0V
V
DS
=80V,
V
GS
=0V,T
J
=150ْC
page
1of5
©
Silikron Semiconductor CO.,LTD.
Version : 1.0
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