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HA1706D

Description
Variable Capacitance Diode, 2.7pF C(T), 30V, Silicon, Hyperabrupt
CategoryDiscrete semiconductor    diode   
File Size236KB,2 Pages
ManufacturerMsi Electronics Inc
Download Datasheet Parametric View All

HA1706D Overview

Variable Capacitance Diode, 2.7pF C(T), 30V, Silicon, Hyperabrupt

HA1706D Parametric

Parameter NameAttribute value
Objectid1404845033
package instructionO-CEMW-N2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage30 V
ConfigurationSINGLE
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio5.9
Nominal diode capacitance2.7 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeO-CEMW-N2
Number of components1
Number of terminals2
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formMICROWAVE
Certification statusNot Qualified
minimum quality factor1100
Maximum repetitive peak reverse voltage30 V
Maximum reverse current2e-8 µA
Reverse test voltage25 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Varactor Diode ClassificationHYPERABRUPT
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