29611DC datasheet, PDF - EEWORLD Datasheet

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29611DC: DescriptionEEPROM, 512X4, 55ns, Parallel, CMOS, CDIP16, CERAMIC, DIP-16; Categorystorage storage; File Size997KB，35 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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29611DC Overview

EEPROM, 512X4, 55ns, Parallel, CMOS, CDIP16, CERAMIC, DIP-16

29611DC Parametric

Parameter Name	Attribute value
Parts packaging code	DIP
package instruction	DIP,
Contacts	16
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum access time	55 ns
JESD-30 code	R-CDIP-T16
memory density	2048 bi
Memory IC Type	EEPROM
memory width	4
Number of functions	1
Number of terminals	16
word count	512 words
character code	512
Operating mode	ASYNCHRONOUS
Maximum operating temperature	75 °C
Minimum operating temperature
organize	512X4
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Programming voltage	5 V
Certification status	Not Qualified
Maximum seat height	5.08 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL EXTENDED
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	7.62 mm
Base Number Matches	1

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29611DC Related Products

	29611DC	29623DM	29623DM/883B	29623DC	29661DC	29653DMB
Description	EEPROM, 512X4, 55ns, Parallel, CMOS, CDIP16, CERAMIC, DIP-16	EEPROM, 512X8, 85ns, Parallel, CMOS, CDIP20, CERAMIC, DIP-20	EEPROM, 512X8, 85ns, Parallel, CMOS, CDIP20, CERAMIC, DIP-20	EEPROM, 512X8, 70ns, Parallel, CMOS, CDIP20, CERAMIC, DIP-20	EEPROM, 256X4, 55ns, Parallel, CMOS, CDIP16, CERAMIC, DIP-16	EEPROM, 2KX4, 90ns, Parallel, CMOS, CDIP18, CERAMIC, DIP-18
Parts packaging code	DIP	DIP	DIP	DIP	DIP	DIP
package instruction	DIP,	DIP,	DIP,	DIP,	DIP,	DIP,
Contacts	16	20	20	20	16	18
Reach Compliance Code	unknow	unknow	unknow	unknow	unknown	unknow
ECCN code	EAR99	3A001.A.2.C	3A001.A.2.C	EAR99	EAR99	3A001.A.2.C
Maximum access time	55 ns	85 ns	85 ns	70 ns	55 ns	90 ns
JESD-30 code	R-CDIP-T16	R-CDIP-T20	R-CDIP-T20	R-CDIP-T20	R-CDIP-T16	R-CDIP-T18
memory density	2048 bi	4096 bi	4096 bi	4096 bi	1024 bit	8192 bi
Memory IC Type	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM
memory width	4	8	8	8	4	4
Number of functions	1	1	1	1	1	1
Number of terminals	16	20	20	20	16	18
word count	512 words	512 words	512 words	512 words	256 words	2048 words
character code	512	512	512	512	256	2000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	75 °C	125 °C	125 °C	75 °C	70 °C	125 °C
organize	512X4	512X8	512X8	512X8	256X4	2KX4
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP	DIP	DIP	DIP	DIP	DIP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Programming voltage	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	5.08 mm	5.08 mm	5.08 mm	5.08 mm	5.08 mm	5.08 mm
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.25 V	5.25 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.75 V	4.75 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL EXTENDED	MILITARY	MILITARY	COMMERCIAL EXTENDED	COMMERCIAL	MILITARY
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
width	7.62 mm	7.62 mm	7.62 mm	7.62 mm	7.62 mm	7.62 mm
Base Number Matches	1	1	1	1	1	-
length	-	24.2 mm	24.2 mm	24.2 mm	-	23.9 mm

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