ICE20N65FP
N-Channel Enhancement Mode MOSFET
Features:
Low
r
DS(on)
Ultra Low Gate Charge
High dv/dt Capability
High Unclamped Inductive Switching (UIS) Capability
High Peak Current Capability
Increased Transconductance Performance
Optimized Design For High Performance Power Systems
Maximum Ratings
@ Tj = 25°C, Unless Otherwise Specified
Symbol
I
D
I
D
, pulse
E
AS
I
AR
dv/dt
V
GS
P
tot
T
j
, T
stg
Parameter
Continous Drain Current
Pulsed Drain Current
Avalanche Energy, Single Pulse
Avalanche Current, Repetitive
MOSFET dv/dt Ruggedness
Gate Source Voltage
Power Dissipation
Operating and Storage Temperature
Mounting Torque
Value
20
60
690
10
50
Product Summary
I
D
V
(BR)DSS
r
DS(ON)
Q
g
T
A
= 25°C
I
D
= 250uA
V
GS
= 10V
V
DS
= 480V
20A
700V
0.17Ω
82nC
Max
Min
Typ
Typ
Pin Description:
D
G
TO-220
S
Unit
A
A
mJ
A
V/ns
V
W
°C
Ncm
Conditions
T
C
= 25°C
T
C
= 25°C
I
D
= 11.5A
Limited by
T
j
max
V
DS
= 480V,
I
D
= 20A, T
j
= 125°C
Static
AC (f>Hz)
T
C
= 25°C
M 2.5 screws
±
20
±
30
35
-55 to +150
50
Symbol
Parameter
Values
Min
-
-
-
Typ
-
-
-
Max
3.5
72
260
Unit
Conditions
Thermal Characteristics
R
thJC
R
thJA
T
sold
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Soldering Temperature, Wave Soldering Only
Allowed At Leads
°C/W
°C
Leaded
1.6mm (0.063in.) from Case for 10s
Electrical Characteristics
@ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
GS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain to Source On-State Resistance
Gate Resistance
650
2.5
-
-
-
-
-
-
675
3
0.1
-
-
0.17
0.45
4
-
3.5
1
100
100
0.199
-
-
V
µA
nA
Ω
Ω
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 650V, V
GS
= 0V, T
j
= 25°C
V
DS
= 650V, V
GS
= 0V, T
j
= 150°C
V
GS
= ±20v, V
DS
= 0V
V
GS
= 10V, I
D
= 10A, T
j
= 25°C
V
GS
= 10V, I
D
= 10A, T
j
= 150°C
f
= 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com
1
ICE20N65FP
Symbol
Parameter
Values
Min
Typ
Max
Unit
Conditions
Dynamic Characteristics
C
iss
C
oss
C
rss
g
fs
t
d(on)
T
r
t
d(off )
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Transconductance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
-
-
-
-
-
-
-
-
2650
943
8
23
10
5
67
4.5
-
-
-
-
-
-
-
-
nS
V
DS
= 380V, V
GS
= 10V, I
D
= 20A, R
G
= 4Ω
(External)
S
V
DS
= >2*I
D
* R
DS,
I
D
= 10A
pF
V
GS
= 0V, V
DS
= 25V, f = 1 MHz
Gate Charge Characteristics
Q
gs
Q
gd
Q
g
V
plateau
Gate to Source Charge
Gate to Drain Charge
Gate Charge Total
Gate Plateau Voltage
-
-
-
-
16
30
82
5
-
-
-
-
V
nC
V
DS
= 480V,
I
D
= 20A, V
GS
= 0 to 10V
Reverse Diode
V
SD
t
rr
Q
rr
I
rm
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
-
-
-
-
1.0
423
8
34
1.2
-
-
-
V
ns
µC
A
V
RR
= 480V,
I
S
=
I
F
, d
iF
/d
t
= 100 A/µS
V
GS
= 0V,
I
S
=
I
F
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com
2
ICE20N65FP
Output Characteristics
60
V
GS
= 10V
60
7V
Transfer Characterstics
50
I
D
- Drain Current (A)
50
I
D
- Drain Current (A)
40
30
20
10
0
5V
6V
40
30
20
10
0
0
T
J
= 150
°C
25
°C
0
5
V
DS
- Drain to Source Voltage (V)
10
15
20
2
V
GS
- Gate to Source Voltage (V)
4
6
8
10
On State Resistance vs Drain Current
On Resistance vs Junction Temperature
400
350
R
DS(on)
- On State Resistance (mΩ)
R
DS(on)
- On State Resistance
(Normalized)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
20
40
60
0.0
-50
-25
0
25
50
75
100
125
150
V
GS
= 10V
I
D
= 10A
300
250
200
150
100
50
0
V
GS
= 10V
I
D
- Drain Current (A)
Gate Charge
T
J
- Junction Temperature (
°C)
10
9
V
GS
- Gate to Source Voltage (V)
8
7
6
5
4
3
2
1
0
V
DS
= 480V
I
D
= 20A
0
20
40
60
80
100
Q
g
- Total Gate Charge (nC)
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com
3
ICE20N65FP
Gate Threshold Voltage vs. Junction Temperature
Capacitance
1.4
V
GS(th)
- Gate Threshold Voltage (Normalized)
100000
10000
C - Capacitance (pF)
I
D
= 250µA
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-50
0
-25
0
T
J
- Junction Temperature (°C)
Ciss
1000
100
10
Crss
Coss
25
50
75
100
125
150
0
100
V
DS
- Drain to Source Voltage (V)
200
300
400
500
600
Drain to Source Breakdown Voltage vs. Junction Temperature
Maximum Rate Forward Biased Safe Operating Area
1.2
V
(BR)DSS
- Drain to Source Breakdown Voltage
(Normalized)
100
Single Pulse
T
c
= 25°C
T = 150°C
V
GS
= 10V
1.1
I
D
- Drain Current (A)
I
D
= 1mA
10
10us
100us
1.0
1
1ms
10ms
0.9
0.1
R
DS (ON)
Limit
Package Limit
Thermal Limit
DC
0.8
-50
-25
0
T
J
- Junction Temperature (°C)
25
50
75
100
125
150
0.01
1
10
100
1000
V
DS
- Drain to Source Voltage (V)
Transient Thermal Response - Junction to Case
1.00
0.5
r
(t)
- Transit Thermal Resistance
(Normalized)
0.2
0.10
0.1
0.05
0.02
Notes:
P
DM
0.01
Single Pulse
t1
t2
Duty Cycle, D =
0.00
1.0E-06
t1
t2
1.0E-04
t - Time (seconds)
1.0E-02
1.0E-00
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com
4
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