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20N170FP

Description
N-Channel Enhancement Mode MOSFET
File Size1007KB,4 Pages
ManufacturerMicross
Websitehttps://www.micross.com
Download Datasheet View All

20N170FP Overview

N-Channel Enhancement Mode MOSFET

ICE20N170FP
N-Channel Enhancement Mode MOSFET
Features:
Low
r
DS(on)
Ultra Low Gate Charge
High dv/dt Capability
High Unclamped Inductive Switching (UIS) Capability
High Peak Current Capability
Increased Transconductance Performance
Optimized Design For High Performance Power Systems
Maximum Ratings
@ Tj = 25°C, Unless Otherwise Specified
Symbol
I
D
I
D
, pulse
E
AS
I
AR
dv/dt
V
GS
P
tot
T
j
, T
stg
Parameter
Continous Drain Current
Pulsed Drain Current
Avalanche Energy, Single Pulse
Avalanche Current, Repetitive
MOSFET dv/dt Ruggedness
Gate Source Voltage
Power Dissipation
Operating and Storage Temperature
Mounting Torque
Value
20
62
520
20
50
Product Summary
I
D
V
(BR)DSS
r
DS(ON)
Q
g
T
A
= 25°C
I
D
= 250uA
V
GS
= 10V
V
DS
= 480V
20A
600V
0.17Ω
62nC
Max
Min
Typ
Typ
Pin Description:
D
G
TO-220
S
Unit
A
A
mJ
A
V/ns
V
W
°C
Ncm
Conditions
T
C
= 25°C
T
C
= 25°C
I
D
= 10A
Limited by
T
j
max
V
DS
= 480V,
I
D
= 20A, T
j
= 125°C
Static
AC (f>Hz)
T
C
= 25°C
M 2.5 screws
±
20
±
30
35
-55 to +150
50
Symbol
Parameter
Values
Min
-
-
-
Typ
-
-
-
Max
3.5
72
260
Unit
Conditions
Thermal Characteristics
R
thJC
R
thJA
T
sold
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Soldering Temperature, Wave Soldering Only Al-
lowed At Leads
°C/W
°C
Leaded
1.6mm (0.063in.) from Case for 10s
Electrical Characteristics
@ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
GS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain to Source On-State Resistance
Gate Resistance
600
2.1
-
-
-
-
-
-
640
3
0.1
-
-
0.17
0.52
4.3
-
3.9
1
100
100
0.199
-
-
V
µA
nA
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 600V, V
GS
= 0V, T
j
= 25°C
V
DS
= 600V, V
GS
= 0V, T
j
= 150°C
V
GS
= ±20v, V
DS
= 0V
V
GS
= 10V, I
D
= 10A, T
j
= 25°C
V
GS
= 10V, I
D
= 10A, T
j
= 150°C
f
= 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com
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