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CTLDM7590

Description
SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
File Size1MB,3 Pages
ManufacturerCentral Semiconductor
Download Datasheet View All

CTLDM7590 Overview

SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CTLDM7590
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLDM7590 is an
enhancement-mode P-channel MOSFET designed for
applications including high speed pulsed amplifiers and
drivers. This MOSFET has beneficially low rDS(ON),
low threshold voltage, and very low gate charge
characteristics.
MARKING CODE: 2
TLM3D6D8 CASE
APPLICATIONS:
• Load/Power Switches
• Boost/Buck Converters
• Battery Charging/Power Management
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
• ESD protection up to 2kV
• Power dissipation: 125mW
• Low rDS(ON)
• Low threshold voltage
• Ultra small, ultra low profile 0.6mm x 0.8mm x 0.4mm
TLM
TM
leadless surface mount package
SYMBOL
VDS
VGS
ID
ID
PD
TJ, Tstg
Θ
JA
20
8.0
140
600
125
-65 to +150
1000
UNITS
V
V
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless
SYMBOL
TEST CONDITIONS
IGSSF, IGSSR VGS=5.0V, VDS=0
IDSS
VDS=5.0V, VGS=0
IDSS
VDS=16V, VGS=0
BVDSS
VGS=0, ID=250μA
VGS(th)
VDS=VGS, ID=250μA
rDS(ON)
VGS=4.5V, ID=100mA
rDS(ON)
VGS=2.5V, ID=50mA
rDS(ON)
VGS=1.8V, ID=20mA
rDS(ON)
VGS=1.5V, ID=10mA
rDS(ON)
VGS=1.2V, ID=1.0mA
Qg(tot)
VDS=10V, VGS=4.5V, ID=100mA
Qgs
VDS=10V, VGS=4.5V, ID=100mA
Qgd
VDS=10V, VGS=4.5V, ID=100mA
gFS
VDS=5.0V, ID=125mA
Crss
VDS=15V, VGS=0, f=1.0MHz
Ciss
VDS=15V, VGS=0, f=1.0MHz
Coss
VDS=15V, VGS=0, f=1.0MHz
ton
VDD=10V, VGS=4.5V, ID=200mA
toff
VDD=10V, VGS=4.5V, ID=200mA
otherwise noted)
MIN
TYP
MAX
100
50
100
1.0
5.0
7.0
10
17
20
0.4
4.0
5.5
8.0
11
20
0.50
0.17
0.11
140
4.0
10
3.7
35
100
UNITS
nA
nA
nA
V
V
Ω
Ω
Ω
Ω
Ω
nC
nC
nC
mS
pF
pF
pF
ns
ns
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