Sirenza Microdevices’ SNA-386 is a GaAs monolithic
broadband amplifier (MMIC) housed in a low-cost surface-
mountable plastic package. At 1950 MHz. this amplifier
provides 20dB of gain when biased at 35mA.
The use of an external resistor allows for bias flexibility and
stability. These unconditionally stable amplifiers are designed
for use as general purpose 50 ohm gain blocks.
Also available in chip form (SNA-300), its small size (0.3mm
x 0.3mm) and gold metallization make it an ideal choice for
use in hybrid circuits.
DC-3 GHz, Cascadable
GaAs MMIC Amplifier
OBSOLETE
See Obsolescence Notice for Replacements
Output Power vs. Frequency
16
14
Product Features
•
Patented GaAs HBT Technology
•
Cascadable 50 Ohm Gain Block
•
21dB Gain, +23dBm TOIP
•
Operates From Single Supply
•
Low Cost Surface Mount Plastic Package
Applications
•
PA Driver Amplifier
•
Cellular, PCS, GSM, UMTS
•
IF Amplifier
•
Wireless Data, Satellite
Units
dB
dB
dB
dB
G Hz
dBm
dBm
dB
dBm
12
10
8
0.1
0.5
1
1.5
2
2.5
3
3.5
4
GHz
Symbol
G
P
G
F
BW 3dB
P
1dB
Parameter
Small Signal Pow er G ain
G ain Flatness
3dB Bandw idth
O utput Pow er at 1dB Compression
Frequency
850 M Hz
1950 M Hz
2400 M Hz
0.1-3 G Hz
M in.
19.0
Typ.
21.0
20.0
19.5
+/- 1.5
3.0
M ax.
1950 M
Hz
1950 M
Hz
1950 M
Hz
0.1-3 G Hz
0.1-3 G Hz
3.2
30
10.0
23.0
4.0
1.5:1
22.0
3.7
35
-0.003
330
4.1
40
O
IP
3
NF
VSW R
ISO L
V
D
O utput
Third O rder Intercept Point
Noise Figure
Input / O utput
Reverse Isolation
-
dB
V
Device O perating Voltage
Device O perating Current
Device
G ain
Temperature Coefficient
I
D
dG /dT
mA
dB
/°C
°C/W
R
TH
, j-l
Thermal Resistance (junction to lead)
Test Conditions:
V
S
= 8 V
R
BIAS
= 120 Ohms
I
D
= 35 mA Typ.
T
L
= 25ºC
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright
2007 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 S. Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-102434 Rev B
OBSOLETE
Preliminary
SNA-386 DC-3 GHz Cascadable MMIC Amplifier
Typical Performance at 25
°
C (Vds = 3.7V, Ids = 35mA)
|S11| vs. Frequency
0
-10
23
21
|S21| vs. Frequency
dB
-20
-30
-40
0.1
0.5
1
1.5
2
2.5
3
dB
19
17
15
0.1
0.5
1
1.5
2
2.5
3
GHz
GHz
|S12| vs. Frequency
0
-5
-10
0
|S22| vs. Frequency
-10
dB
-15
-20
dB
-20
-30
-25
-30
0.1
0.5
1
1.5
2
2.5
3
-40
0.1
0.5
1
1.5
2
2.5
3
GHz
GHz
Noise Figure vs. Frequency
5
4.5
TOIP vs. Frequency
30
28
26
dB
4
3.5
3
0.1
0.5
1.0
1.5
2
2.5
3
dBm
24
22
20
0.1
0.5
1
1.5
2
2.5
3
GHz
GHz
Absolute Maximum Ratings
Parameter
Max.
Device Current
(I
D
)
Max.
Device
Voltage (V
D
)
Max.
RF Input Power
Max.
Junction Temp.
(T
J
)
Operating Temp.
Range (T
L
)
Absolute Limit
70
mA
6V
+10 dBm
+150°C
-40°C to +85°C
+150°C
Max.
Storage Temp.
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l
303 S. Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-102434 Rev B
OBSOLETE
Preliminary
SNA-386 DC-3 GHz Cascadable MMIC Amplifier
Application Circuit Element Values
Typical Application Circuit
R
BIAS
Reference
Designator
500
850
Frequency (Mhz)
1950
2400
3500
C
B
220 pF
100 pF
68 nH
100 pF
68 pF
33 nH
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
1 uF
1000
pF
C
D
L
C
C
D
L
C
RF in
C
B
1
4
SNA-386
3
C
B
Recommended Bias Resistor Values for I
D
=35mA
R
BIAS
=( V
S
-V
D
) / I
D
RF out
Supply Voltage(V
S
)
R
BIAS
5V
36
6V
68
8V
120
10 V
180
2
Note: R
BIAS
provides DC bias stability over temperature.
V
S
R
BIAS
1 uF
1000 pF
Mounting Instructions
1. Use a large ground pad area under device pins 2
and 4 with many plated through-holes as shown.
2. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
L
C
S3
C
D
C
B
C
B
Pin #
Function
RF IN
Description
RF input pin. This pin requires the use
of an external DC blocking capacitor
chosen for the frequency of operation.
Connection to ground. For optimum RF
performance, use via holes as close to
ground leads as possible to reduce lead
inductance.
Part Identification Marking
The part will be marked with an “S3” designator on the
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