Advanced Technical Information
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Low Gate Charge and Capacitances
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-264
TO-247
TO-264
TO-268
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
£
I
DM
, di/dt
£
100 A/ms, V
DD
£
V
DSS
,
T
J
£
150°C, R
G
= 2
W
T
C
= 25°C
IXFH 60N25Q
IXFK 60N25Q
IXFT 60N25Q
V
DSS
I
D25
R
DS(on)
t
rr
= 250 V
= 60 A
= 47 mW
£
250 ns
Maximum Ratings
250
250
±20
±30
60
240
60
45
1.5
5
360
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
(TAB)
TO-264 AA (IXFK)
G
D
S
D (TAB)
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
6
10
4
g
g
g
G = Gate
S = Source
TAB = Drain
Features
• Low gate charge
• International standard packages
• Epoxy meet UL 94 V-0, flammability
classification
• Low R
DS (on)
HDMOS
TM
process
• Rugged polysilicon gate cell structure
• Avalanche energy and current rated
• Fast intrinsic Rectifier
Advantages
• Easy to mount
• Space savings
• High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
250
2
4
±200
T
J
= 25°C
T
J
= 125°C
50
1
V
V
nA
mA
mA
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 • I
D25
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
47 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
98630 (6/99)
© 2000 IXYS All rights reserved
1-2
IXFH 60N25Q IXFK 60N25Q
IXFT 60N25Q
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
22
35
5100
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1000
400
27
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 2.0
W
(External),
60
80
25
180
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
39
90
0.35
TO-247
TO-264
0.25
0.15
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
K/W
Dim. Millimeter
Min. Max.
A
B
C
D
E
F
G
H
J
K
L
M
N
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32 5.49
5.4
6.2
1.65 2.13
-
4.5
1.0
1.4
10.8 11.0
4.7
0.4
5.3
0.8
Inches
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
-
0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
TO-247 AD (IXFH) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= 0.5 • I
D25
, pulse test
1.5 2.49
TO-264 AA (IXFK) Outline
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Test Conditions
V
GS
= 0 V
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ. max.
60
240
1.5
250
A
A
V
ns
mC
A
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
25.91
19.81
5.46
0.00
0.00
20.32
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
5.13
2.89
2.10
1.42
2.69
3.09
0.83
26.16
19.96
BSC
0.25
0.25
20.83
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
Repetitive; pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
I
F
= I
S
-di/dt = 100 A/ms, V
R
= 100 V
1
8
TO-268AA (IXFT) (D
3
PAK)
Dim.
A
A
1
A
2
b
b
2
C
D
E
E
1
e
H
L
L1
L2
L3
L4
Millimeter
Min. Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
Min. Recommended Footprint
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-2
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