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MBSK110S

Description
Schottky Bridge Rectifier
File Size192KB,2 Pages
ManufacturerETC2
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MBSK110S Overview

Schottky Bridge Rectifier

MBSK12S THRU MBSK110S
Schottky Bridge Rectifier
Features
I
o
1.0A
V
RRM
20V~100V
Schottky chip
High surge forward current capability
Low VF
3.8±0.2
MBS
4.6
±
0.2
2.5±0.2
Applications
General purpose 1 phase Bridge
rectifier applications
0.6±0.1
2.5±0.25
1.0±0.15
6.8±0.2
0.3±0.1
Dimensions in millimeters
Limiting Values(Absolute Maximum Rating)
Item
Repetitive Peak Reverse
Voltage
Symbol Unit
V
RRM
V
Conditions
MBSK
12S 14S 16S 18S 110S
20
40
60
80
100
Average Rectified Output
Current
I
O
A
60Hz sine wave,
R-load, Ta=25℃
On alumina substrate
On glass-epoxi substrate
1.0
0.8
40
Surge(Non-
repetitive)Forward Current
Current Squared Time
Storage Temperature
Junction Temperature
I
FSM
A
60H
Z
sine wave, 1 cycle, T
j
=25℃
2
It
A
2
S
1ms≤t<8.3ms Tj=25℃,Rating of per diode
6.6
-55 ~+150
-55 ~+150
T
stg
T
j
Electrical Characteristics
(T
a
=25℃ Unless otherwise specified)
Item
Peak Forward Voltage
Peak Reverse Current
Symbol Unit
V
FM
I
RRM
V
mA
Test Condition
I
FM
=0.5A,
Pulse measurement, Rating of per diode
V
RM
=V
RRM
, Pulse measurement, Rating of per diode
Between junction and ambient, On alumina substrate
0.55
Max
0.65
0.5
76
0.85
Thermal Resistance
R
θ
J-A
℃/W
Between junction and ambient, On glass-epoxi
substrate
Between junction and lead
134
R
θ
J-L
20
http://www.luguang.cn
mail:lge@luguang.cn
1.2±0.2

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