i, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
NPN POWER TRANSISTORS
COMPLEMENTARY TO THE D41E SERIES
D40E Series
30 - 80 VOLTS
2 AMP, 8 WATTS
D40E series are power transistors
designed for various specific and general purpose applica-
tions, such as: output and driver stages of amplifiers operati ng
at frequencies from DC to greater than 0.1 MH;:; series, shunt
and switching regulators; low and high frequency inverters/
converters; and many others.
Features:
• High free-air power dissipation
• NPN complement to D41E PNP
• Low collector saturation voltage (0.5V typ. @ 1.0A l
c
)
• Excellent linearity
• Fast switching
CASE STYLE TO-202
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0360-0410
TYPE
TO-202
TERM 1
EMITTER
TERM 2
BASE
TFBM 3
COUKTCR
TAB
COLLECTOR
maximum ratings (T
A
=
25° C)
(unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current — Continuous
Peakd)
Base Current — Continuous
Total Power Dissipation @ T
A
= 25°C
@ T
c
= 25°C
Operating and Storage Junction
Temperature Range
SYMBOL
D40E1
30
45
5
D40E5
60
70
5
D40E7
80
90
5
VCEO
VCES
VEBO
ic
ICM
IB
PD
T
2
3
1
2
3
1
2
3
1
UNITS
Volts
Volts
Volts
A
A
Watts
°C
1.33
8
-55 to +1 50
1.33
8
-55 to +150
1.33
8
-55 to +150
-
•
St
9
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes:
Ve"
from Case for 5 Seconds
(1) Pulse Test Pulse Width = 300ms Duty Cycle < 2%
R&JA
RSJC
_
L
75
15.6
+260
75
15.6
+260
75
15.6
+260
°C/W
°C/W
°c
Quality Semi-Conductors
electrical Characteristics (T
c
=
25° C)
(unless otherwise specified)
L
CHARACTERISTIC
SYMBOL
MIN
TYP
MAX
UNIT
off characteristics*
1
*
Collector-Emitter Sustaining Voltage
(lc = 10mA)
Collector Cutoff Current
(V
CE
= Rated V
C
ES>
Emitter Cutoff Current
(V
E
B = 5V)
D40E1
D40E5
D40E7
v
CEO(sus)
30
60
80
—
—
—
—
0.1
0.1
Volts
ICES
IEBO
—
—
//A
A,A
second breakdown
Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 1
on characteristics
DC Current Gain
(l
c
= 100mA, VCE = 2V)
OC = 1A, VCE = 2V)
Collector-Emitter Saturation Voltage
(I
C
= 1-OA, I
B
= 0.1A)
Base-Emitter Saturation Voltage
(l
c
= 1.0mA, IB = 0.1 A)
hFE
hFE
50
10
—
—
—
—
—
—
1.0
1.3
—
VcE(sat)
v
BE(sat)
Volts
Volts
dynamic characteristics
Collector Capacitance
(V
CB
= 10V, f = 1M
Hz
)
Current-Gain — Bandwidth Product
(l
c
= 100mA, VCE = 10V)
CCBO
*T
—
—
9
230
—
—
PF
MHz
switching characteristics
Resistive Load
Delay Time +
Rise Time
Storage Time
Fall Time
lc = 1A, I
B
1 = lB2 = 0.1A
td + V
ts
—
—
130
400
170
—
—
nS
Vcc = 30V, tp = 25
M
sec
tf
(1) Pulse Test PW = 300ms Duty Cycle < 2%.
1
PEAK •
CURRENT
MAX.
POWER
DIS
SIP/
•c
CASE 2
ro
^xTc^
CURRE
NT"^
N
V
•^
PULS
ED OPI RAT
w
. DUTY CYCLE
< •
on
PULSE
500
T j- ISC
IA
lOmi PULSED
D
^
s
v
SK
^
\>
V
—
.
Omt PULSE -
—-
'
1
T j - 2 5
•c
r-
•r.
^«
^^>
'i.-
—'
\N^
^
100
T
J—S
5'C
X
V.
^
(
V
^V
O.IA
\
•\
V
\
1
\ D4OES — | —
MAX
vc
E
- 2 V
v<
E
| D40E
\
\N
M
^
30
-
MAX
MAX
*
IV
EC
El
, D4OE
10V
V
CE
^
^
\v
k '
O.IO
I.O
V
^
100V
0.01
I
C
-AMPERES
FIG. 2
S
FIG. 1
SAFE REGION OF OPERATION
TYPICAL H
FE
VS l
c
DSP and ARM Processors
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