D40N datasheet, PDF - EEWORLD Datasheet

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D40N: Description40 A, 100 V, SILICON, RECTIFIER DIODE, DO-5; Categorysemiconductor Discrete semiconductor; File Size314KB，1 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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D40N Overview

40 A, 100 V, SILICON, RECTIFIER DIODE, DO-5

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, O

ne..

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

Silicon Power lan iransistors

High Voltage Video

Output Transistor

The D40N is a silicone plastic encapsulated power transistor for TV video

ind color output stages. Other TV and general applications include: (1) Drive

for the TV horizontal sweep tube;. (2) Audio output stage for portable TV

sets, (3) High-voltage transistor regulator; (4) Video display drivers for

oscilloscopes, electroluminescent displays and desk calculators;

(5)

High-

voltage general usage.

FEATURING;

• POWER-QMS

passivation

• L o w C

C B

( 2 . 0 p f t y p . @ V

C B

= 20V)

• Gain rated at 3 collector currents

D40N

l««di

cm

B§

Formed

To A TO-5 Pin Configuration

absolute maximum ratings: (25°C) (unlessotherwise specified)

D40NKD

D40N2

Voltages<2)<«)

D40N3

P40N4

!

•

II •

.

II

•

D40N5

375

5

Collectoi to Emitter

Emitter to Base

Current

Collector (Continuous)

Power Dissipation

Tab at 2VC(3>

Tab at 70"C

Free Air at 50°C

Free Air at 50°C (Without Tab)

Thermal Resistance!

3

'

Junction to Case

Junction to Ambient

With Tab

Without Tab

Temperature^!

Storage

Operating

Lead Soldering, 1/16" ± 1/32"

from case for 10 seconds max.

EBO

250

5

300

5

0.1

Volts

Amps

Ic

PT

6.25

4

1.33

20

75

100

•

.

Watts

•c/w

•C

T

STG

-55 to+150

-55 t o + 1 5 0

+260

NOTES:

(l)The liiit di^it i i a part number which designates a voltage yade. Tab and lead forming is specified by a letter after this digit.

(2) Test conditions: Ic "

l

'°

mA

.

R

9E " 10 kSZ

(3) Tab temperature is measured on center of tab, 1/16" from plastic body.

(4) Pulsed measurement, 300 jUsec pulse width, duty cycle S 2%.

electrical characteristics: (25°C) (unless otherwise specified)

D40N1

D40N3

Min.

Max.

Forward Current Ratio

(V

CE

= 10V, l

c

= 4 m A )

(V

ci

= 10V, l

c

= 20mA)

10V, I

c

- 4 0 m A )

h

Fg

h

ft

!IFE

20

30

20

90

04ON6

Min.

15

20

15

Max.

_

—

D40N2

D40N4

Min.

Max.

30

60

30

180

Quality

Semi-Conductors

D40N Related Products

	D40N	D40N1	D40N2	P40N4	D40N3	D40N5
Description	40 A, 100 V, SILICON, RECTIFIER DIODE, DO-5	40 A, 100 V, SILICON, RECTIFIER DIODE, DO-5	40 A, 200 V, SILICON, RECTIFIER DIODE, DO-5	40 A, 100 V, SILICON, RECTIFIER DIODE, DO-5	40 A, 300 V, SILICON, RECTIFIER DIODE, DO-5	40 A, 500 V, SILICON, RECTIFIER DIODE, DO-5
Is it Rohs certified?	-	incompatible	incompatible	-	incompatible	incompatible
package instruction	-	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	-	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	-	unknow	unknow	-	unknow	unknow
Maximum collector current (IC)	-	0.1 A	0.1 A	-	0.1 A	0.1 A
Configuration	-	SINGLE	SINGLE	-	SINGLE	SINGLE
Minimum DC current gain (hFE)	-	20	30	-	20	15
JESD-30 code	-	R-PSFM-T3	R-PSFM-T3	-	R-PSFM-T3	R-PSFM-T3
JESD-609 code	-	e0	e0	-	e0	e0
Number of components	-	1	1	-	1	1
Number of terminals	-	3	3	-	3	3
Maximum operating temperature	-	150 °C	150 °C	-	150 °C	150 °C
Minimum operating temperature	-	-55 °C	-55 °C	-	-55 °C	-55 °C
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	-	FLANGE MOUNT	FLANGE MOUNT	-	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	-	NPN	NPN	-	NPN	NPN
surface mount	-	NO	NO	-	NO	NO
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	-	THROUGH-HOLE	THROUGH-HOLE	-	THROUGH-HOLE	THROUGH-HOLE
Terminal location	-	SINGLE	SINGLE	-	SINGLE	SINGLE
transistor applications	-	AMPLIFIER	AMPLIFIER	-	AMPLIFIER	AMPLIFIER
Transistor component materials	-	SILICON	SILICON	-	SILICON	SILICON

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