ne.
,
O
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN Darlington Power Transistors
D44D1/2/3/4/5/6
DESCRIPTION
High DC Current Gain-h
FE
= 2000(Min)@ l
c
= 1A
• Complement to Type D45D 1/2/3/4/5/6
2
p,
i
APPLICATIONS
• Designed for use in power linear and switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
1
iV,'
1 2 3
"
~R1
'•3
1.
BASE
2. COLLECTOR
'J. EMITTER
TO-220C package
D44D1
D44D2
Collector-Emitter
Voltage
D44D3
D44D4
D44D5
D44D6
D44D1
D44D2
-
-60
V
-80
-100
-120
VCEV
A
^yi
M
•-
-o
T
H
'
B H
-« V •-
*S
*
—T500'
K
L
-60
V
-80
-100
-120
-5
-12
-20
-0.5
125
150
-65-150
VCEO
Collector-Emitter
Voltage
D44D3
D44D4
D44D5
D44D6
r
rL
rr
»4J-« o
- f* J
G
\*
R »
c 1
I
~M
A
b
C
L'
F
G
h
j
K
1
•J
p
S
V
1
mm
MNS
15.70
9.90
4.20
0.70
3.40
4.9$
2.70
0.44
13.20
1.10
2.70
2.50
1.29
(>.45
MAX
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation^
>T
C
=25X:
Junction Temperature
Storage Temperature Range
V
A
A
A
W
Ic
ICM
IB
PC
Tj
T
s
tg
r
°c
15.90
10.10
4.40
0.90
3.00
5.18
2.90
0.46
li.40
1.30
2.90
2.70
1.31
<>.(>5
8.8(5
8.66
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished
by
NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Darlington Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
D44D1/2/3/4/5/6
MIN
TYP.
MAX
UNIT
D44D1
D44D2
D44D3
l
c
= -30mA;l
B
=0
D44D4
D44D5
D44D6
VcE(sat)-i
VcE(sat)-2
VBEIOR)
VECF.I
ICEO
ICBO
IEBO
VcEO(SUS)
Collector-Emitter
Sustaining Voltage
-60
V
-80
-100
-120
l
c
= -5A; I
B
= -20mA
lc=-10A; I
B
= -100mA
lc= -5A ; V
CE
= -4V
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
C-E Diode Forward Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
-2.0
-3.0
-2.5
-2.0
-02
-0.4
-2.0
-5
2000
V
V
V
V
mA
mA
mA
I
F
= -5A
VCE= /aVcEOmaxI le= 0
VCB
=
VcBOmax;lE= 0
V
CB
=
1
/
2
V
CB
omax;lE= 0;T
C
= 150°C
VEB= -5V; l
c
=0
lc=-1A;V
C
E=-2V
h
FE
Embedded System
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