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K4S641632C-TC/L10

Description
1M x 16Bit x 4 Banks Synchronous DRAM
File Size741KB,42 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K4S641632C-TC/L10 Overview

1M x 16Bit x 4 Banks Synchronous DRAM

K4S641632C
1M x 16Bit x 4 Banks Synchronous DRAM
FEATURES
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the system
clock
Burst read single-bit write operation
DQM for masking
Auto & self refresh
64ms refresh period (4K cycle)
CMOS SDRAM
GENERAL DESCRIPTION
The K4S641632C is 67,108,864 bits synchronous high data
rate Dynamic RAM organized as 4 x 1,048,576 words by 16
bits, fabricated with SAMSUNG′s high performance CMOS
technology. Synchronous design allows precise cycle control
with the use of system clock I/O transactions are possible on
every clock cycle. Range of operating frequencies, programma-
ble burst length and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high perfor-
mance memory system applications.
ORDERING INFORMATION
Part No.
K4S641632C-TC/L60
K4S641632C-TC/L70
K4S641632C-TC/L75
K4S641632C-TC/L80
K4S641632C-TC/L1H
K4S641632C-TC/L1L
K4S641632C-TC/L10
Max Freq.
166MHz(CL=3)
143MHz(CL=3)
133MHz(CL=3)
125MHz(CL=3)
100MHz(CL=2)
100MHz(CL=3)
66MHz(CL=3&2)
LVTTL
54
TSOP(II)
Interface Package
FUNCTIONAL BLOCK DIAGRAM
I/O Control
LWE
Data Input Register
LDQM
Bank Select
1M x 16
1M x 16
1M x 16
1M x 16
Refresh Counter
Output Buffer
Row Decoder
Sense AMP
Row Buffer
DQi
Address Register
CLK
ADD
Column Decoder
Col. Buffer
Latency & Burst Length
LRAS
LCBR
LCKE
LRAS
LCBR
LWE
LCAS
Programming Register
LWCBR
LDQM
Timing Register
CLK
CKE
CS
RAS
CAS
WE
L(U)DQM
* Samsung Electronics reserves the right to change products or specification without notice.

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Description 1M x 16Bit x 4 Banks Synchronous DRAM 1M x 16Bit x 4 Banks Synchronous DRAM 1M x 16Bit x 4 Banks Synchronous DRAM 1M x 16Bit x 4 Banks Synchronous DRAM 1M x 16Bit x 4 Banks Synchronous DRAM 1M x 16Bit x 4 Banks Synchronous DRAM 1M x 16Bit x 4 Banks Synchronous DRAM
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