IRF430 datasheet, PDF - EEWORLD Datasheet

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IRF430: Description4.5 A, 20 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3; CategoryDiscrete semiconductor The transistor; File Size118KB，3 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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IRF430 Overview

4.5 A, 20 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3

IRF430 Parametric

Parameter Name	Attribute value
Maker	New Jersey Semiconductor
Reach Compliance Code	unknow

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S.IILS.U

line.

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

IRF430-433/IRF830-833

MTM/MTP4N45/4N50

N-Channel Power MOSFETs,

4.5 A, 450 V/500 V

Description

These devices are n-channel, enhancement mode, power

MOSFETs designed especially for high voltage, high spaed

applications, such as off-line switching power supplies,

UPS, AC and DC motor controls, relay and solenoid

drivers.

TO-220AB

• V

Rated at ± 20 V

• Silicon Gate for Fast Switching Speeds

• IDSS. V

s(on), SOA and V

(ih) Specified at Elevated

Temperature

• Rugged

IRF430

IRF431

IRF432

IRF433

MTM4N45

MTM4N50

IRF830

IRF831

IRF832

IRF833

MTP4N4S

MTP4N50

Rating

IRF431/433

IRF831/833

MTM/MTP4N4S

Maximum Ratings

Symbol

VDGR

Characteristic

Drain to Source Voltage

Drain to Gate Voltage

= 20 kfl

Gate to Source Voltage

Operating Junction and

Storage Temperature

Maximum Lead Temperature

for Soldering Purposes,

1/8' From Case for 5 s

Rating

IRF430/432

IRF830/B32

MTM/MTP4N50

Unit

500

±20

-55 to +150

450

±20

-55 to +150

VGS

Tj, T

slfl

•c

275

Maximum On-State Characteristics

IRF430/431

IRF830/831

DS(on)

IRF432/433

IRF832/833

MTM/MTP4N45

Static Drain-to-Source

On Resistance

Drain Current

Continuous

Pulsed

1.5

2.0

1.5

4.5

4.0

Maximum Thermal Characteristics

RSJC

RSJA

Thermal Resistance,

Junction to Case

Thermal Resistance,

Junction to Ambient

Total Power Dissipation

at T

- 25°C

1.67

"C/W

°c/w

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press, However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

IRF430 Related Products

	IRF430	IRF433	IRF831	IRF833	MTP4N4S	IRF830
Description	4.5 A, 20 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3	4.5 A, 20 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3	4.5 A, 20 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3	4.5 A, 20 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3	4.5 A, 20 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3	4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Maker	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	-	-	New Jersey Semiconductor
Reach Compliance Code	unknow	unknow	unknow	unknow	-	unknown

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