MTP4N4S datasheet, PDF - EEWORLD Datasheet

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MTP4N4S: Description4.5 A, 20 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3; Categorysemiconductor Discrete semiconductor; File Size118KB，3 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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MTP4N4S Overview

4.5 A, 20 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3

MTP4N4S Parametric

Parameter Name	Attribute value
Number of terminals	2
Minimum breakdown voltage	20 V
state	ACTIVE
packaging shape	round
Package Size	Flange mounting
Terminal form	PIN/PEG
terminal coating	NOT SPECIFIED
Terminal location	BOTTOM
Packaging Materials	Metal
structure	Single WITH BUILT-IN diode
Shell connection	DRAIN
Number of components	1
Transistor component materials	silicon
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	universal power supply
Maximum leakage current	4.5 A
Rated avalanche energy	1.1 mJ
Maximum drain on-resistance	1.8 ohm
Maximum leakage current pulse	18 A

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Cx

J.

S.IILS.U

,

line.

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

IRF430-433/IRF830-833

MTM/MTP4N45/4N50

N-Channel Power MOSFETs,

4.5 A, 450 V/500 V

Description

These devices are n-channel, enhancement mode, power

MOSFETs designed especially for high voltage, high spaed

applications, such as off-line switching power supplies,

UPS, AC and DC motor controls, relay and solenoid

drivers.

TO-220AB

• V

GS

Rated at ± 20 V

• Silicon Gate for Fast Switching Speeds

• IDSS. V

D

s(on), SOA and V

QS

(ih) Specified at Elevated

Temperature

• Rugged

IRF430

IRF431

IRF432

IRF433

MTM4N45

MTM4N50

IRF830

IRF831

IRF832

IRF833

MTP4N4S

MTP4N50

Rating

IRF431/433

IRF831/833

MTM/MTP4N4S

Maximum Ratings

Symbol

V

D

ss

VDGR

Characteristic

Drain to Source Voltage

Drain to Gate Voltage

R

QS

= 20 kfl

Gate to Source Voltage

Operating Junction and

Storage Temperature

Maximum Lead Temperature

for Soldering Purposes,

1/8' From Case for 5 s

Rating

IRF430/432

IRF830/B32

MTM/MTP4N50

Unit

500

±20

-55 to +150

450

±20

-55 to +150

V

VGS

Tj, T

slfl

•c

T

L

275

Maximum On-State Characteristics

IRF430/431

IRF830/831

R

DS(on)

IRF432/433

IRF832/833

MTM/MTP4N45

Static Drain-to-Source

On Resistance

Drain Current

Continuous

Pulsed

1.5

2.0

1.5

n

A

ID

4.5

18

4.0

16

4.0

10

Maximum Thermal Characteristics

RSJC

RSJA

Thermal Resistance,

Junction to Case

Thermal Resistance,

Junction to Ambient

Total Power Dissipation

at T

c

- 25°C

1.67

"C/W

60

75

60

75

60

75

°c/w

PD

w

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press, However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

MTP4N4S Related Products

	MTP4N4S	IRF430	IRF433	IRF831	IRF833	IRF830
Description	4.5 A, 20 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3	4.5 A, 20 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3	4.5 A, 20 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3	4.5 A, 20 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3	4.5 A, 20 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3	4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Maker	-	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	-	New Jersey Semiconductor
Reach Compliance Code	-	unknow	unknow	unknow	unknow	unknown

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