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IRF722

Description
3.3 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size1007KB,3 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric Compare View All

IRF722 Overview

3.3 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

IRF722 Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
Reach Compliance Codeunknown
Base Number Matches1
,
Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
REPETITIVE AVALANCHE AND dv/dt RATED*
IM-CHAIMNEL
400 Volt, 1.8 Ohm HEXFET
TO-220AB Plastic Package
Product Summary
Part Number
IRF720
IRF721
IRF722
(RF723 '
BVDSS
400V
350V
400V
350V
R
DS(on)
"D
1.8Q
3.3A
3.3A
2.8A
2.8A
1.80
2.50
2.5(1
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
FEATURES:
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
• Simple Drive Requirements
Ease of Paralleling
2.1! 10 1131
2(210.103)
_ I054I0.4ISI _. T E K M 4 -
10.29 (0 4dil " 0(I»IN
3.71 10.1491 „,.
3 54 10.1391
u
"
CASE STYLE AND DIMENSIONS
|
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10.54 (0.415)
r
f
13.97 (0.550)
MAX.
i
I
t
1
T
}
IT0
1.1
(045)MIN.
—i
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fiTioTfl
MAX.
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TERM3 -SOURCE
TERM 2 - D » A I N
TERM 1 - G A T E ,
\
\
\/ (0.160)
I
Am
*
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T -
1
15.09 (0.594)
MAX.
i
UM-
OS941
43ZfO.UO)
1
ll\ \
1
IBI
210)
* 8 3 (
'190)
fT
i
I
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3 44 |S HOI
139!
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||
2.79(0.110)
?»(OMQ)
r
13.4!
osioi
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^SECTION X-X
1
V-
J
S !
rH
IS
0939(
037}
Co* Styl. TO-220AB
Oimeniioni in Millimeters and llnchn)
•This data sheet applies to product with batch codes that begin with a digit, a. 2A3B
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished h> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors

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IRF722 IRF720 IRF721 IRF723
Description 3.3 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 3.3 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 3.3 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 2.8 A, 350 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
Maker New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor
Reach Compliance Code unknown unknown unknown unknow
Base Number Matches 1 1 1 -
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