,
Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
REPETITIVE AVALANCHE AND dv/dt RATED*
IM-CHAIMNEL
400 Volt, 1.8 Ohm HEXFET
TO-220AB Plastic Package
Product Summary
Part Number
IRF720
IRF721
IRF722
(RF723 '
BVDSS
400V
350V
400V
350V
R
DS(on)
"D
1.8Q
3.3A
3.3A
2.8A
2.8A
1.80
2.50
2.5(1
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
FEATURES:
•
Repetitive Avalanche Ratings
•
Dynamic dv/dt Rating
• Simple Drive Requirements
•
Ease of Paralleling
2.1! 10 1131
2(210.103)
_ I054I0.4ISI _. T E K M 4 -
10.29 (0 4dil " 0(I»IN
3.71 10.1491 „,.
3 54 10.1391
u
"
CASE STYLE AND DIMENSIONS
|
I2ZI0041)
10.54 (0.415)
r
f
13.97 (0.550)
MAX.
i
I
t
1
T
}
IT0
1.1
(045)MIN.
—i
j-*—
648I025SJ
fiTioTfl
MAX.
^
TERM3 -SOURCE
TERM 2 - D » A I N
TERM 1 - G A T E ,
\
\
\/ (0.160)
I
Am
*
~~
T -
1
15.09 (0.594)
MAX.
i
UM-
OS941
43ZfO.UO)
1
ll\ \
1
IBI
210)
* 8 3 (
'190)
•
fT
i
I
3MIHISSI
3 44 |S HOI
139!
1SSO)
||
2.79(0.110)
?»(OMQ)
•
•
•
r
13.4!
osioi
|
I
i
^SECTION X-X
1
V-
J
S !
rH
IS
0939(
037}
Co* Styl. TO-220AB
Oimeniioni in Millimeters and llnchn)
•This data sheet applies to product with batch codes that begin with a digit, a. 2A3B
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished h> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IRF720, IRF721, IRF722, IRF723 Devices
Absolute Maximum Ratings
Parameter
ID ® TC ™
25
°C
IRF720, IRF721
3.3
2.1
13
60
0.40
±20
190
{See Fig. 14)
3.3
(See E
AR
)
5.0
(See I
AR
)
4.0
(See Rg. 17)
-66 to 150
'
.
IRF722. IRR23
2.8
.
1.8
11
.
-
-
Units
A
A
A
W
VWK®
V
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current (0
ID
®
TC
"
100°C
IOM
PO @ ^C
=
25°C
Max. Fbwer Dissipation
Linear Derating Factor
VQS
EAS
I AR
EAR
Jv/ctt
Tj
TSTG
Gate-to-Source Voltage
Single Pulsa Avalanche Energy
<S>
Avalanche Current ©
(Repetitive or Non-Repetitive)
Repetitive Avalanche Energy CD
- Peak Diode Recovery rfv/dt 0)
Operating Junction
Storage Temperature Range
Lead Temperature
mj
A
mj
Vfns
°C
°C
300 (0.063 In. 0.6mm) from
case lor
10s)
Electrical Characteristics
@
T, = 25°C (Unless Otherwise Specified)
Parameter
BVoss
Drain-to-Source Breakdown voltage
Type
IRF720
IRF722
IRF721
IRF723
Fine/nut Static Drain-to-Source
On-State Resistance 9)
IRF720
IRF72I
IRF722
IRF723
'Dion)
On-State Drain Current ®
IRR20
IRR21
IRF722
IRF723
VGS(th) Gate Threshold Voltage
gf
s
'DSS
Forward Transconductance ®
Ze[0
Win.
400
Typ.
Max.
-
Units
V
Test Conditions
-
350
-
-
3.3
-
2.B
2.0
1.8
-
—
-
2.7
-
—
-
-
13
2.2
7.2
10
14
30
13
4.5
1.6
1.8
v
GS
- ov, i
D
- 250 ^A
1.8
0
2.5
v
GS
- iov, i
D
= I.SA
-
A
V
DS
> bton)
x
"DSIon) Max.
VGS =
10V
VDS = VGS. 'D - ZS<VA
IDS = i.8A, V
DS a
wv
V
OS
= Max. Rating, VQS = OV
Vrjs ~ 0.8 X Max Rating
V
CS
- OV, Tj - 125°C
ALL
ALL
ALL
4.0
-
250
1000
500
-500
20
3.3
11
15
21
45
20
V
SID)
liA
Gate voltagu Drain Current
1
GSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Draln ("Mlller'1 Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
ALL
ALL
ALL
ALL
-
-
-
-
-
nA
nA
nC
nC
nC
ns
ns
ns
ns
nH
VQS =
2
°V
V
GS
=
-20V
3 3A
IQSS
Qg
Qg
S
Qgd
'dtonl
t,
'd(off)
t|
Lrj
V
GS
-
1
"
v
.
ID -
VQS * 0.8 x Max. Rating
See Rg. 16
(Independent of operating temperature)
ALL
ALL
ALL
ALL
ALL
-
-
-
-
v
DD
= 2oov, i
D
- 3.3A, R
G
= ien
RD = sen
Ses Rg. 15
(Independent of operating temperature)
Measured from the drain
lead, 6mm (0.25 in.) from
package to center of die.
Measuredfromthe source
lead, 6mm 10.25 in.) from
package to source bonding
V
GS
= "«
V
DS -
f = 1.0 MHi
See Fig. 10
2
5
V
Modified MOSFET symbol
showing the internal
inductances.
~—It
/ i l i
t
i , IT...
\ KT
Lg
Internal Source Inductance
ALL
7.6
nH
Cjgg
C
OS3
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
ALL
ALL
ALL
-
-
-
350
64
8.1
-
--
-
PF
pF
pF
IRF720, IRF721, IRF722, IRF723 Devices
Source-Drain Diode Ratings and Characteristics
Parameter
Ic
Continuous Source Current
(Body Diodel
Pulsed Source Current
(Body Diodel (D
Diode Forward Vfaltage ®
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Type
ALL
Mm.
-
Typ,
-
Max.
3.3
Units
A
Test Conditions
Modified MOSFET symbol showing the integre)
Reverse p-n junction icctifier.
-~-—
3t
ISM
AU
~
~
13
A
V
s
p
t,,
OpR
ton
ALL
ALL
ALL
ALL
-
120
0.64
-
270
1.4
1.6
600
3.0
V
ns
fC
Tj = 25°C, l
s
= 3.3A. V
GS
= 0V
Tj - 2S°C, I
F
- 3.3A.
<i\Ul =
100 A/,a
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS t LQ.
Thermal Resistance
RtnJC
RlhCS
RthjA
JuncUon-to-Csse
Case-to-SInk
Junction-to-Ambient
ALL
ALL
ALL
-
-
-
-
0.50
-
2.5
-
30
K/W®
IOW®
KW®
Mounting surface fiat, smooth, and greased
Typical socket mount
Typical SPICE Computer Model Parameters
(For More Information See Application Note AN-975)
Device
Level.
SPICE
MOSFET
Model
3
W(m),
Channel
Width
0.279
Llpm),
Channel
Length
1.2
Theta (1M,
Mobility
Modulation
0.30
UO (CM2/V-S),
Surface
Mobility
450
VTOCV),
Threshold
Voltage
4.00
R1 (D),
Drain
Resistance
1.4
R2(Q),
Source
Resistance
0.02
RG ID).
Gate
Resistance
1.5
ALL
CGSO (pfl.
Gate-
Source
Capacitance
770
CGD(F)
Gate-
Drain
Capacitance
E1 (V),
Voltage Dependent
Voltage Source
2 + 0.995 VDQ
LO InH),
Drain
Inductance
4.5
LS(nH),
Source
Inductance
7.6
LGInH),
Gate
Inductance
7.6
HIM,
Diode
Saturation
Current
3.6 x 10'
13
RSIO),
Diode
Bulk
Resistance
0.026
ca
C8 = 1500 pf + 1.8 x 10-
22
(VQt;)
48
0>
Repetitive Rating; Pulse width limited by
maximum function temperature (see figure 5)
Refer to current HEXFET reliability report
0 V
DD
• BOV. Starting Tj - 26°C,
L - 31 mH.RQ = 250,
Peak I
L
- 3.3A.
01 I
SD
s
3.3A, d/dt £ 66A/
M
3,
V
OD
=i 8V
DSS
, Tj i 160°C
Suggested RQ - 180
®
Pulse width s 300
ia;
Duty Cycle s 2%
K/W = °C/W
W/K - W/°C
®
80HS PULSE TEST
6.0V—i
•^
V
nc
z
E
0V
80pl. PUL
si-
ESJ
s
T , =
a
j/
^
isc
°c
0.1
V
6S
=5.0VJ
0
•4.5V-
A
nv
40
80
ISO
160
200
V
DS
. DRAIN-TO-SQUHCE VOLTAGE (VOLTS)
Fig. 1 — Typical Output Characteristics
10
-2
I
i
t
V
ss
. GATE-TO-SOURCE VOLTAGE (VOLTS)
)
g
/'/ i//
=
' /
j
1
t
i
/
J4
r i -
25
' i/
y
1
/
\
/
(
[
0(
1(
Fig. 2— Typical Transfer Characteristics
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