ne..
,
O
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
IRFP254
HEXFET® Power MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Isolated Central Mounting Hole
Fast Switching
Ease of Paralleling
Simple Drive Requirements
V
DSS
=250V
I
D
= 23A
The TO-247 package is preferred for commercial-industrial applications
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar but superior to tne earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance between pins to
meet the requirements of most safety specifications.
TO-247AC
Absolute Maximum Ratings
ID @ T
c
= 25°C
ID® Tc= 100°C
I DM
PD @ T
c
= 25°C
VGS
EAS
IAH
EAR
dv/dt
Tj
TSTG
Parameter
Continuous Drain Current, VGS @ 1 0 V
Continuous Drain Current, VGS @ 10 V
Pulsed Drain Current CD
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ®
Avalanche Current T
Repetitive Avalanche Energy £
Peak Diode Recovery dv/dt J>
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
23
15
92
190
Units
A
W
W/"C
1 .5
±20
410
23
V
mJ
A
mJ
V/ns
19
4.8
-5510+150
300 (1 .6mm from case)
10lbf.in(1.1 N.m)
°C
Thermal Resistance
ROJC
Rocs
RWA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
Typ.
0.24
Max.
0.65
Units
"CAW
_
40
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IRFP254
Electrical Characteristics @ Tj = 25°C (unless otherwise specified)
V(BR)DSS
AV(BR)DSS/ATj
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
.
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
250
-
2.0
11
—
—
—
—
—
—
—
—
—
—
.—
—
—
—
—
=
Typ.
—
0.39
—
—
—
—
—
—
—
—
—
—
15
63
74
50
5.0
13
Max.
—
—
0.14
4.0
—
Units
Test Conditions
V
V
GS
=OV, ln= 250nA
v/°c
n
V
Reference to 25°C, I
D
= 1mA
V
G
s=10V, I
D
=14A ®
VDS=VGS, lo= 250uA
V
DS
=50V, b=14A
®
V
DS
=250V, V
GS
=OV
V
DS
=200V, V
GS
=OV
:
Tj=125°C
V
QS
=20V
V
QS
=-20V
b=23A
Vos=200V
V
as
=10V See Fig. 6 and 13®
Voo=125V
b=23A
Re=6.2n
Ro=5.4n See Figure 10®
Between lead,
|
6 mm (0.25in.)
/|T—5\m package
and center of
die contact
V
GS
=OV
vL_Si
1
Ves(th)
9*
s
\if\C
25
250
100
-100
140
24
71
—
—
—
—
—
Q
3
Qgs
Qgc,
tr^ml
t,
ttf(off)
tl
Lu
Ls
nH
—
—
—
-
pF
J HI T)
C
ISS
Coss
Crss
2700
620
180
V
DS
= 25V
/=1 .0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter
Min.
-
—
Typ.
-
-
Max.
23
A
92
1.8
—
370
4.6
560
6.9
V
Units
Is
ISM
Vso
tr,
Qr,
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ®
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Test Conditions
MOSFET symbol
^_^
I!
showing the
r)
integral reverse
°Aj |LL
S
p-n junction diode.
Tj=25°C, ls=23A, V
GS
=OV W
Tj=25°C, I
F
=23A
di/dt=100A/|is ®
ns
nc
ton
Intrinsic turn-on time is neglegtble (turn-on is dominated by Ls+Lu}
Notes:
® Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
'
VoD=50V, starting Tj=25°C, L=1.2mH
Ro=25n, lAS=23A (See Figure 12)
® ISDS23A, di/dt<180A/us, VDD<V(BH)DSS,
Tj<150°C
® Pulse width < 300 u.s; duty cycle <2%.
Test/Measurement
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