na.
i, U
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
HEXFET® TRANSISTORS IRFZ2O
IM-Channel
50 Volt:
Power MOSFETs
50 Volt, 0.1 Ohm HEXFET
TO-220AB Plastic Package
Product Summary
Part Number
IRFZ20
IRFZ22
VDS
50V
50V
R
DS(on)
ID
15A
14A
o.ton
0.12O
The HEXFET transistors also offer all of the well established
advantages of MOSFETs such as voltage control, very fast
switching, ease of paralleling, and temperature stability of
the electrical parameters.
They are well suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, high energy pulse circuits, and in systems that
are operated from low voltage batteries, such as automotive,
portable equipment, etc.
Features:
Extremely Low RDS(on)
Compact Plastic Package
Fast Switching
Low Drive Current
Ease of Paralleling
Excellent Temperature Stability
Parts Per Million Quality
CASE STYLE AND DIMENSIONS
.
1 3Z(UG5i)
f 22 (0048)
10.54(0.415)
MAX.
T E R M J - SOURCE
TEAM 2 -OfUIN
TERM I - GATE ,
^-,
15.09 (0.594)
MAX.
t I
I
I
I
1
2 79 10
1101
!!9{OOSOI^—
[7~
13.97 (0.550)
MAX.
28SIOII4I
1 SECTION X-X
051100201
I
I
0 4 I I O O I 6 I ^_
T^U--I
0 SJ9JO OJ21
068€ 10 02)}
2 14 "C 1041
Can Style TO-220AB
Dimensions in Millimeters and (Inches)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Absolute Maximum Ratings
'
Parameter
VDS
Drain • Source Voltage <D
VOGR
Diain
'
Gno
Vfetteao (R
GS
- 20 KO) <D
ID @
T
C
e
26°C
Continuous Drain Current
ID @ TC - 100°C Continuous Drain Current
lp
M
Pulsed Drain Current <3>
VGS
Gata - Source tottage
PD @ TC •» 25°C Max ftjwer Dissipation
Linear Derating Factor
lt_rvi
Inductive Current, Clamped
Tj
T^tg
Operating Junction and
Storage Temperature flange
Lead Temperature
IWZ20
60
H
16
10
60
±20
40 (See Rg. 14)
0.32 (See Bg. 14)
(See Rg. 16 and
16) L = lOOjiH
60
-66 to 160
IRFZ22
60
60
14
9.0
68
Unto
V
V
A
A
A
V
W
VWK®
A
58
«c
°C
300 (0.063 In. (1.6mm) from case for 10s)
Electrical Characteristics
@
TC = 25°C (Unless Otherwise Specified)
BVoss
Parameter
Drain - Source Breakdown Voltage
Type
IRFZ20
IRFZ22
ALL
ALL
ALL
ALL
Mln.
60
60
2.0
-
—
—
-
16
14
-
-
6.0
-
-
-
-
-
-
-
-
-
-
"
ALL
Typ.
VQS(th) Gale Threshold yojtago
IQSS
Gate-Source leakage Forward
'GSS
Gate-Source Leakage Reverse
IQSS
Zefo Gate
^rlsge Drain Current
iDlon]
R
DS(on)
On-Surle Drain Current <S>
Static Drain-Source On-State Resistance ©
Forward Transconductance <2>
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source Plus Gate-Drain)
Gate-Source Charge
Gate-Drain ("Miller") Charge
Internal Drain Inductance
gfg
Cjgg
CQSS
0,53
l
d[on)
t,
id/offl
tf
QQ
^
CUg
Qg
d
LQ
IRFZ20
IRFZ22
IRFZ20
IRFZ22
ALL
ALL
ALL
ALL
ALL
ALL
ALL
—
-
-
-
-
-
-
-
—
0.080
0.110
6.0
560
260
60
16
46
20
16
1-2
9.0
3.0
3.5
4.5
ALL
ALL
ALL
ALL
Max.
—
-
4.0
500
-600
260
1000
—
—
0.100
0.120
—
960
350
100
30
90
40
30
17
-
-
Units
V
V
V
nA
nA
(.A
«A
A
A
0
Test Conditions
VGS = ov
I
D
- 250 pA
VDS -
VQS,
I
D
= 250 ^A
v
GS
- 2ov
v
ss
— zov
V
DS
=
Max
- Rating, V
GS
=
OV
VDS = Max. Rating x 0.8, V
G
s = OV, T
c
- 126°C
VDS > 'Dion) " Rosionlmax..
V
GS -
lov
a
SIM
pF
pF
pF
ns
ns
ns
VGS •
10V
'
'D "
9
-
OA
x
VDS > lOton)
See Rg. 10
"DStonl max.. ID = »-OA
V
GS
- ov, V
DS
= zsv « =
1.0MH<
VDD ^ 25V, I
D
- S.OA, z,,
ns
nC
nC
nC
nH
nH
• 500
See Rg. 17
(MOSFET switching times are essentially independent of
operating temperatura)
VQS *
10V
- ID ~
20A
-
V
DS "= °-
8 Max
""ing.
See Rg. 18 tor test circuit. (Gate charge is essentially
independent of operating temperature.)
Measured from the
contact screw on tab
to center of dia
Measured from the
drain lead, 6mm (0.26 in.)
from package to center of
dia
Measured from the source
lead, 6mm (0.26 in.) from
package to source bonding
pad.
Modified MOSFET
symbol showing the
internal device
inductances.
Lg
Internal Source Inductance
ALL
7.5
nH
Thermal Resistance
R,hjC
r\|,
cs
fyhJA
Junction-to-Case
Cese-to-SInk
Junction-to-Ambiervt
ALL
ALL
ALL
-
-
-
—
1.0
-
3.12
-
80
K/WS)
K/W ®
KAV®
Mounting surface flat smooth, and greased.
Typical socket mount
Source-Drain Diode Ratings and Characteristics
le
ICM
VSD
tf,
QRR
t^
Continuous Source Current
(Body Diode)
Pulse Source Current
(Body Diode) (I
Diode Forward Voltage ©
Reverse Recovery Time
Reverse Recovered Charge
Forward Turn-on Tim*
IRFZ20
IRFZ22
IRFZ20
IRFZ22
WFZ20
IHFZ22
ALL
ALL
ALL
Modifiod MOSFET symbol showing the Integral
o
-
-
16
A
reverse P-N junction rectifier.
'f|~">
A
14
—
—
60
A
—
—
56
A
—
—
—
—
V
T
C
- 26°C, I
S
= 16A, VQS - OV
1.6
—
—
1.4
V
T
C
= 25°C, I
S
= "A, VGS - OV
Tj = 160°C, I
F
= 16A, dlpBt - 100A/^
ns
-
100
-
Tj = 160°C, IF = 16A, dtf*it =
IHOAlia
cC
—
0.4
-
Intrinsic turn-on time Is negligible. Turrvon s|>eod Is substantially controlled by Lg + L
D
.
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