E.1 is.il ^>E.tnL-dona\jt.c.t:oi
iPtoaacfi,
Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
IRFZ34
Power MOSFET
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
PRODUCT SUMMARY
V
DS
(V)
FlDS(on) (^)
60
FEATURES
• Dynamic dV/dt Rating
0.050
V
GS
= 10V
46
11
22
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
Q
g
(Max.) (nC)
Qgs(nC)
Qgd (nC)
Configuration
Single
TO-220AB
GO
If
J,
u
0
s
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
c
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
3
Linear Derating Factor
Single Pulse Avalanche Energy
b
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
SYMBOL
LIMIT
60
V
±20
30
UNIT
V
DS
V
GS
V-c it 10 V
T
c
= 25 °C
T
C
= 100°C
ID
IDM
EAS
21
120
A
0.59
200
88
4.5
W/°C
mJ
W
T
c
= 25 °C
PD
dV/dt
Tj, T
st
g
V/ns
°C
- 5 5 t o + 175
300
d
10
for 10 s
6-32 or M3 screw
Ibf • in
N -m
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T, = 25 °C, L = 259 uH, R
g
= 25 U, I
AS
= 30 A (see fig. 12).
c. I
SD
£ 30 A, dl/dt < 200 A/MS, V
DD
< V
DS
, Tj < 175 °C.
d. 1.6 mm from case.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
RthJA
RthCS
TYP.
-
0.50
-
MAX.
62
-
1.7
UNIT
°c/w
fyhJC
SPECIFICATIONS (Tj = 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current"
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Ciss
CQSS
Crss
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
AV
D
s/Tj
V
GS(th)
V
GS
= 0 V, I
D
= 250 uA
Reference to 25 °C, I
D
= 1 mA
60
-
2.0
-
-
-
-
9.3
-
0.065
-
-
4.0
±
100
25
250
0.050
V
v/°c
V
nA
MA
Q.
VDS = VGS, ID = 250 uA
V
GS
= ± 20 V
VDS = 60 V, V
GS
= 0 V
V
DS
= 48 V, V
GS
= 0 V, T, = 150 °C
VGS = 10V
!
D
= 18A
b
V
DS
= 25V, ID = 18 A
-
-
-
-
-
-
IGSS
bss
RDS(on)
9fs
-
S
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
-
1200
600
100
-
-
-
13
100
29
52
4.5
7.5
-
-
-
46
11
22
-
-
-
-
-
nH
-
ns
nC
PF
Qg
v
_
10V
Qgs
Qgd
ID = 30 A, V
DS
= 48V,
see fig. 6 and 13
b
-
-
-
td(on)
tr
td(off)
tf
V
DD
= 30 V, I
D
= 30 A,
R
g
= 12fi, R
D
= 1.0 £J, see fig. 10
b
-
-
-
LD
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
/fi~"%
(I NI T
}
V_^s
-
-
Is
ISM
VSD
trr
Qrr
ton
MOSFET symbol
showing the
p - n junction diode
-
n
t~i\l reverse
-
-
-
-
-
-
-
120
0.7
30
A
120
1.6
230
1.4
V
ns
nC
Tj = 25 °C, l
s
= 30 A, VGS = 0 V
b
T
9R °P 1
^("1 A HI/Ht
1 HO A/no
Intrinsic turn-on time is negligible (turn-on is dominated by LS and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width < 300 us; duty cycle < 2
%.
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