Standard SRAM, 256X4, 500ns, NMOS, CDIP24
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| package instruction | DIP, DIP22,.4 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Maximum access time | 500 ns |
| I/O type | SEPARATE |
| JESD-30 code | R-GDIP-T24 |
| JESD-609 code | e0 |
| memory density | 1024 bi |
| Memory IC Type | STANDARD SRAM |
| memory width | 4 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 24 |
| word count | 256 words |
| character code | 256 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 256X4 |
| Output characteristics | 3-STATE |
| Exportable | NO |
| Package body material | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP22,.4 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| Maximum slew rate | 0.07 mA |
| Maximum supply voltage (Vsup) | 5.25 V |
| Minimum supply voltage (Vsup) | 4.75 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | NMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Base Number Matches | 1 |
| 2101-1F | 2101-2F | 2101F | |
|---|---|---|---|
| Description | Standard SRAM, 256X4, 500ns, NMOS, CDIP24 | Standard SRAM, 256X4, 650ns, NMOS, CDIP24 | Standard SRAM, 256X4, 1000ns, NMOS, CDIP24 |
| Is it Rohs certified? | incompatible | incompatible | incompatible |
| package instruction | DIP, DIP22,.4 | DIP, DIP22,.4 | DIP, DIP22,.4 |
| Reach Compliance Code | unknow | unknow | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Maximum access time | 500 ns | 650 ns | 1000 ns |
| I/O type | SEPARATE | SEPARATE | SEPARATE |
| JESD-30 code | R-GDIP-T24 | R-GDIP-T24 | R-GDIP-T24 |
| JESD-609 code | e0 | e0 | e0 |
| memory density | 1024 bi | 1024 bi | 1024 bi |
| Memory IC Type | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| memory width | 4 | 4 | 4 |
| Number of functions | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 |
| Number of terminals | 24 | 24 | 24 |
| word count | 256 words | 256 words | 256 words |
| character code | 256 | 256 | 256 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C | 70 °C | 70 °C |
| organize | 256X4 | 256X4 | 256X4 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE |
| Exportable | NO | NO | NO |
| Package body material | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP | DIP | DIP |
| Encapsulate equivalent code | DIP22,.4 | DIP22,.4 | DIP22,.4 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| Maximum slew rate | 0.07 mA | 0.07 mA | 0.07 mA |
| Maximum supply voltage (Vsup) | 5.25 V | 5.25 V | 5.25 V |
| Minimum supply voltage (Vsup) | 4.75 V | 4.75 V | 4.75 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO |
| technology | NMOS | NMOS | NMOS |
| Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm |
| Terminal location | DUAL | DUAL | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Base Number Matches | 1 | 1 | - |
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