1N6940UTK3 – 1N6942UTK3, AS and CS
Qualified Levels:
JAN, JANTX, and
JANTXV
Available on
commercial
versions
Thinkey
TM
Silicon Schottky Diode
Qualified per MIL-PRF-19500/726
DESCRIPTION
This Defense Logistics Agency (DLA) qualified Schottky diodes offer great value for aerospace
and defense applications requiring high density power and excellent heat dissipation (typically
0.25 – 0.35 degrees C per Watt (C/W)). The 1N6940UTK3AS through 1N6942UTK3AS
device polarity is anode-to-strap (standard) and is also available optionally in 1N6940UTK3CS
through 1N6942UTK3CS as cathode-to-strap. This part can also be ordered in a strapless
version. Up-screening for high-reliability applications is also available. Microsemi also offers
numerous other products to meet higher and lower power voltage regulation applications.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
•
•
•
JEDEC registered 1N6940 – 1N6942 number series.
Oxide passivated structure.
Guard ring protection for increased reverse energy capability.
Epitaxial structure minimizes forward voltage drop.
Hermetically sealed, low profile ceramic surface mount power package.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/726.
(See
part nomenclature
for all available options).
RoHS compliant versions available (commercial grade only).
ThinKey
TM
3
Package
APPLICATIONS / BENEFITS
•
•
•
•
•
Low package inductance.
Very low thermal resistance.
Also available with no strap as 1N6940UTK3, 1N6941UTK3 and 1N6942UTK3 by special request.
Rugged ceramic and metal construction with no wire bonds.
High surge capabilities and enable double-side cooling.
MAXIMUM RATINGS
@ T
C
= +25 °C, unless otherwise noted
Parameters / Test Conditions
Junction and Storage Temperature Range
Thermal Resistance Junction to Case
(Anode-to-Strap)
Thermal Resistance Junction to Case
(Cathode-to-Strap)
(Also applicable to strapless option)
Symbol
T
j
and T
stg
R
ӨJC
R
ӨJC
V
RWM
I
O
I
FSM
Value
-65 to +150
0.25
0.35
15
30
45
150
2000
Unit
°C
°C/W
°C/W
V
A
A (pk)
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Working Peak Reverse Voltage:
1N6940UTK3,CS,AS
1N6941UTK3,CS,AS
1N6942UTK3,CS,AS
Average Rectified Output Current, T
C
= +100 °C
Non-repetitive Peak Surge Current
(tp = 8.3 ms, half sine-wave)
LDS-0298, Rev. 1 (130371)
©2013 Microsemi Corporation
Page 1 of 5
1N6940UTK3 – 1N6942UTK3, AS and CS
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Ceramic-molybdenum Thinkey 3.
TERMINALS: Tin/lead solder or RoHS compliant matte/tin (on commercial grade only) plating.
MARKING: Part number and polarity symbol.
POLARITY: Standard is anode to strap. Reverse is cathode to strap.
WEIGHT: Approximately 1.7 grams.
See
package dimensions
on page 4.
PART NOMENCLATURE
JAN 1N6940 U
Reliability Level
JAN = JAN level
JANTX = JANTX level
JANTXV = JANTXV level
Blank = Commercial
JEDEC type number
(See
Electrical Characteristics
table)
Surface Mount package
TK
3 AS (e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Polarity
AS=Anode to Strap (standard)
CS=Cathode-to-Strap
Blank=No Strap
Package Size
Package Class
Symbol
f
I
F
I
R
T
C
t
p
V
R
frequency
Forward current, dc
Reverse current, dc
Case temperature
Pulse time
Reverse Voltage, dc
SYMBOLS & DEFINITIONS
Definition
LDS-0298, Rev. 1 (130371)
©2013 Microsemi Corporation
Page 2 of 5
1N6940UTK3 – 1N6942UTK3, AS and CS
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted
Parameters / Test Conditions
Reverse (Leakage) Current
V
R
= 15 V, Tc = 25 °C
V
R
= 30 V, Tc = 25 °C
V
R
= 45 V, Tc = 25 °C
V
R
= 15 V, Tc = +125 °C
V
R
= 30 V, Tc = +125 °C
V
R
= 30 V, Tc = +125 °C
V
R
= 45 V, Tc = +125 °C
Forward Voltage
Pulse test, pulse width tp = 300
µs
I
F
= 75 A (pk), T
C
= +25 °C
I
F
= 25 A (pk), T
C
= +25 °C
I
F
= 25 A (pk), T
C
= +25 °C
I
F
= 150 A (pk), T
C
= +25 °C
I
F
= 50 A (pk), T
C
= +25 °C
I
F
= 50 A (pk), T
C
= +25 °C
I
F
= 150 A (pk), T
C
= +125 °C
I
F
= 150 A (pk), T
C
= +125 °C
I
F
= 110 A (pk), T
C
= +125 °C
I
F
= 150 A (pk), T
C
= +125 °C
Junction Capacitance
V
R
= 5 V, f = 1 MHz, V
SIG
= 50 mV (p-p)
Breakdown Voltage
Pulse test, tp = 35 ms
I
R
= 50 mA (pk), T
C
= 25 °C
1N6940UTK3, CS, AS
1N6941UTK3, CS, AS
1N6942UTK3, CS, AS
1N6940UTK3, CS, AS
1N6941UTK3, CS, AS
1N6942UTK3, CS, AS
V
(
BR)1
16.5
33
50
15
30
45
V
Symbol
MIN
MAX
Unit
1N6940UTK3, CS, AS
1N6941UTK3, CS, AS
1N6942UTK3, CS, AS
1N6940UTK3, CS, AS
1N6941UTK3, CS, AS
1N6942UTK3, CS, AS
1N6942UTK3, CS, AS
I
R1
5.0
1,200
1,200
500
1,500
mA
I
R2
I
R3
mA
mA
1N6940UTK3, CS, AS
1N6941UTK3, CS, AS
1N6942UTK3, CS, AS
1N6940UTK3, CS, AS
1N6941UTK3, CS, AS
1N6942UTK3, CS, AS
1N6940UTK3, CS, AS
1N6941UTK3, CS, AS
1N6942UTK3, CS, AS
1N6942UTK3, CS, AS
1N6940UTK3, CS, AS
1N6941UTK3, CS, AS
1N6942UTK3, CS, AS
V
F1
V
F2
V
F3
V
F4
C
J
0.43
0.42
0.40
0.50
0.50
0.46
0.43
0.50
0.50
0.57
10,000
7,500
7,000
V
V
V
V
pF
I
R
= 50 mA (pk), T
C
= -55 °C
V
(
BR)2
V
LDS-0298, Rev. 1 (130371)
©2013 Microsemi Corporation
Page 3 of 5
1N6940UTK3 – 1N6942UTK3, AS and CS
PACKAGE DIMENSIONS
Ltr
BL
BT
BLT
C
E
F
LC
LF
LT
LW
Dimensions
Millimeters
Inch
Min
Max
Min
Max
0.420
0.440
10.67
11.18
-
0.115
-
2.92
-
0.125
-
3.18
0.469
0.509
11.91
12.93
0.038 NOM
0.97 NOM
0.331
0.341
8.41
8.66
0.040 NOM
1.02 NOM
0.055
0.075
1.40
1.91
0.005
0.015
0.127
0.381
0.185
0.215
4.70
5.46
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to
Φx
symbology.
SEE PAD LAYOUT ON NEXT PAGE.
LDS-0298, Rev. 1 (130371)
©2013 Microsemi Corporation
Page 4 of 5
Analog electronics
京公网安备 11010802033920号
EEWORLD
