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UM4901BE3

Description
Pin Diode, Silicon,
CategoryDiscrete semiconductor    diode   
File Size932KB,12 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

UM4901BE3 Overview

Pin Diode, Silicon,

UM4901BE3 Parametric

Parameter NameAttribute value
Objectid8072118199
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW DISTORTION
applicationATTENUATOR; SWITCHING
Shell connectionISOLATED
ConfigurationSINGLE
Maximum diode capacitance3 pF
Diode component materialsSILICON
Maximum diode forward resistance0.5 Ω
Diode typePIN DIODE
frequency bandHIGH FREQUENCY TO S BAND
JESD-30 codeO-XALF-W2
Minority carrier nominal lifetime10 µs
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Maximum power dissipation2.5 W
surface mountNO
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal formWIRE
Terminal locationAXIAL
UM4000 / UM4900
HIGH POWER PIN DIODES
DESCRIPTION
The UM4000 and UM4900 series features
high power PIN diodes with long carrier
lifetimes and thick I-regions. They are
especially suitable for use in low distortion
switches and attenuators, in HF through S
band frequencies. While both series are
electrically equivalent, the UM4900 series
have higher power ratings due to a shorter
thermal path between the chip and package.
High charge storage and long carrier
lifetime enable high RF levels to be
controlled with relatively low bias current.
Similarly, peak RF voltages can be handled
well in excess of applied reverse bias voltage.
Both series have been fully qualified in high
power UHF phase shifters and megawatt peak-
power duplexers, accumulating thousands of
hours of proven performance. Both types have
been used in the design of antenna selectors and
couplers, where inductance and capacitance
elements are switched in and out of filter or
cavity networks.
KEY FEATURES
WWW .
Microsemi
.C
OM
Voltage ratings to 1000 V
Power dissipation to 37.5 W
Series resistance rated at 0.5
Carrier lifetime greater than 5 µs
Non cavity design
Thermally matched configuration
Low capacitance at 0 V bias
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Package
A
Condition
O
25 C Pin Temperature
Low conductance at 0 V bias
Compatible with automatic
insertion equipment
UM4000
PD
θ
25 W
UM4900
PD
θ
4
O
C/W
6
O
C/W 37.5 W
B & E
½ in. total length to 25
O
C Contact
Free Air
O
C
25 C Stud Temperature
D
SM
All
25 C Stud Temperature
25
O
C End Cap Temperature
1 us pulse (Single)
O
12 W 12.5
O
C/W 12 W 12.5
O
C/W
2.5 W
2.5 W
O
25 W
6 C/W 37.5 W
4
O
C/W
18.75 W
20 W
8 C/W
7
O
C/W
O
APPLICATIONS/BENEFITS
Isolated stud package available
Surface mount package available
25 W
6 C/W
N/A
O
100 kW
100 kW
VOLTAGE RATINGS
Reverse Voltage @ 10 uA
100
200
400
600
1000
UM4000
UM4001
UM4002
-
UM4006
UM4010
UM4900
UM4901
UM4902
-
UM4906
-
UM4000/UM49000
UM4000/UM49000
Style “B”
Style “SM”
Copyright
2005
Rev. 0, 2005-07-14
Microsemi
Page 1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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