Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
| Parameter Name | Attribute value |
| Objectid | 1404818433 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Collector-based maximum capacity | 20 pF |
| Collector-emitter maximum voltage | 25 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 63 |
| JEDEC-95 code | TO-92 |
| JESD-30 code | O-PBCY-W3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 0.625 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 40 MHz |
| BC728-10 | BCX58-9 | BC560B | |
|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, | Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, |
| Objectid | 1404818433 | 1404818518 | 1404818378 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Collector-based maximum capacity | 20 pF | 4.5 pF | 4.5 pF |
| Collector-emitter maximum voltage | 25 V | 32 V | 45 V |
| Configuration | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 63 | 250 | 200 |
| JEDEC-95 code | TO-92 | TO-92 | TO-92 |
| JESD-30 code | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Polarity/channel type | PNP | NPN | PNP |
| Maximum power dissipation(Abs) | 0.625 W | 0.625 W | 0.625 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO |
| Terminal form | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM |
| Transistor component materials | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 40 MHz | 125 MHz | 150 MHz |
| Maximum collector current (IC) | - | 0.1 A | 0.1 A |
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