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Datasheet> All Categories > Wireless rf/communication> Radio frequency and microwave> FMA3058-000SQ
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FMA3058-000SQ

Description
Wide Band Low Power Amplifier, 2000MHz Min, 20000MHz Max, 1 Func, GAAS, ROHS COMPLIANT PACKAGE-7
CategoryWireless rf/communication    Radio frequency and microwave   
File Size349KB，6 Pages
ManufacturerRF Micro Devices (Qorvo)
Environmental Compliance  
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FMA3058-000SQ Overview

Wide Band Low Power Amplifier, 2000MHz Min, 20000MHz Max, 1 Func, GAAS, ROHS COMPLIANT PACKAGE-7

FMA3058-000SQ Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Objectid1006961406
package instructionDIE OR CHIP
Reach Compliance Codecompliant
Other featuresLOW NOISE
Characteristic impedance50 Ω
structureCOMPONENT
Gain12 dB
Maximum input power (CW)20 dBm
Number of functions1
Maximum operating frequency20000 MHz
Minimum operating frequency2000 MHz
Maximum operating temperature85 °C
Minimum operating temperature-55 °C
Encapsulate equivalent codeDIE OR CHIP
power supply5 V
RF/Microwave Device TypesWIDE BAND LOW POWER
technologyGAAS

FMA3058-000SQ Preview

FMA3058
FMA3058
2GHz to 20GHz BROADBAND MMIC
AMPLIFIER
Package Style: Bare Die
Product Description
The FMA3058 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic
travelling wave amplifier. It is suitable for use in broadband communication, instru-
mentation, and electronic warfare applications. The die is fabricated using our
0.25µm process. The circuit is DC-blocked at both the RF input and the RF output.
Features
15dB Gain
Low Noise Amplifier
Single Supply +5V @ 90mA
15dBm P1dB Output Power
at 20GHz
pHEMT Technology
Input Return Loss<-12dB
Output Return Loss<-10dB
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
VDD
Applications
RF IN
RF OUT
Test Instrumentation
Electronic Warfare
Broadband Communication
Infrastructure
Fiber Optics
Parameter
Electrical Specifications
(Small-Signal Unless Noted)
Small Signal Gain
Input Return Loss
Output Return Loss
Output Power at P1dB Compression
Point
Min.
Specification
Typ.
Max.
Unit
Condition
T
AMBIENT
=25°C, Z
0
=50Ω pads B and C open cir-
cuit.
12
15
15
12
15
-12
-12
17
18
-10
-10
dB
dB
dB
dBm
2GHz to 20GHz
2GHz to 20GHz
2GHz to 20GHz
2GHz, 5V drain bias
17
dBm
10GHz, 5V drain bias
15
dBm
20GHz, 5V drain bias
Drain Current
90
mA
5V drain bias
Noise Figure
3.5
dB
2GHz, 5V drain bias
3
dB
10GHz, 5V drain bias
6.5
dB
20GHz, 5V drain bias
Note: The device has a default current, set by an on-chip resistor. Pads B and C can be bonded to ground to increase the device current by reducing the
default resistance.
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A1 DS090609
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6
FMA3058
Absolute Maximum Ratings
Parameter
Maximum Input Power (P
IN
)
Drain Voltage (V
DD
)
Total Power Dissipation (P
TOT
)
Thermal Resistivity (θJC)
Operating Temperature (T
OPER
)
Storage Temperature (T
STOR
)
-55 to 85
-55 to 150
°C
°C
Rating
+20
+12
Unit
dBm
V
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Pad Layout
Pad
A
B
C
D
E
F
G
Name
IN
R2
R1
OUT
GND
VD
VG
0.050
0.134
0.185
0.269
2.966
3.066
Description
RF input
Internal source bias resistor
Internal source bias resistor
RF output
Ground
Drain voltage
Optional gate voltage
1.500
1.443
1.369
G F
E
D
1.141
1.041
0.506
0.422
0.385
0.301
0.530
0.430
0 REF
A
C
B
Dimensions in mm.
0 REF
0.054
0.154
2.914
2.988
100
Die Size (μm)
3120x1500
Die Thickness (μm) Min. Bond Pad Pitch (μm) Min. Bond Pad Opening (μmxμm)
122
72x62
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3.120
Rev A1 DS090609
FMA3058
Typical Measured Performance for On-Wafer Measurements
Measurement Conditions: I
D
=90mA, V
DD
=5V, T
AMBIENT
=25°C, pads B and C open circuit.
Gain
20.00
18.00
16.00
S21 ( dB)
S12 ( dB)
14.00
12.00
10.00
8.00
6.00
4.00
2.00
0.00
2
4
6
8
10
12
14
16
18
20
0.00
-10.00
-20.00
-30.00
-40.00
-50.00
-60.00
-70.00
2
4
6
8
10
12
14
16
18
20
Re ve rs e Is olation
Fre que ncy (GHz)
Fre que ncy ( GHz )
Input re tur n Los s
0.00
-5.00
-10.00
S11 ( dB)
-15.00
-20.00
-25.00
-30.00
-35.00
-40.00
2
4
6
8
10
12
14
16
18
20
S22 ( dB)
0.00
-5.00
-10.00
-15.00
-20.00
-25.00
-30.00
-35.00
-40.00
2
4
Output re turn Los s
6
8
10
12
14
16
18
20
Fre que ncy ( GHz )
Fr eque ncy ( GHz)
Noise Figur e
8
7
Noise Figure (dB)
6
5
4
3
2
1
0
2
4
6
8
10
12
14
16
18
20
Fre quency (GHz)
P1dB (dBm)
20
18
16
14
12
10
8
6
4
2
0
2
4
6
8
P1dB
10
12
14
16
18
20
Fre que ncy (GHz)
Rev A1 DS090609
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 6
FMA3058
Typical Performance for On-Wafer Measurements Over Temperature
Measurement Conditions: I
D
=90mA, V
DD
=5V, T
AMBIENT
=25°C, pads B and C open circuit.
T
AMBIENT
=25°C,
T
COLD
=-55
°C,
T
HOT
=+85°C
Gain
20.00
18.00
16.00
S21 ( dB)
S12 ( dB)
Re ve rs e Is olation
0.00
-10.00
-20.00
-30.00
-40.00
-50.00
-60.00
-70.00
14.00
12.00
10.00
8.00
6.00
4.00
2.00
0.00
2
4
6
8
10
12
14
16
18
20
2
4
6
8
10
12
14
16
18
20
Fre que ncy (GHz)
Fr eque ncy ( GHz)
Input Re turn Loss
0.00
-5.00
-10.00
S11 ( dB)
S22 ( dB)
-15.00
-20.00
-25.00
-30.00
-35.00
-40.00
2
4
6
8
10
12
14
16
18
20
5.00
0.00
-5.00
-10.00
-15.00
-20.00
-25.00
-30.00
-35.00
-40.00
0
2
4
Output Ret urn Los s
6
8
10
12
14
16
18
20
Fre que ncy ( GHz )
Fr eque ncy ( GHz)
P1dB
20
18
16
P1dB (dBm)
14
12
10
8
6
4
2
0
2
4
6
8
10
12
14
16
18
20
Fre quency (GHz)
4 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A1 DS090609
FMA3058
Biasing Circuit Schematic
VDD
100 nF
100 pF
RF IN
RF OUT
Assembly Diagram
It is recommended that the RF connections be made using bond wires with 25µm diameter and a maximum length of 300µm.
Ground connections should be made according to the required bias conditions.
T o Evaluation Bo ard via an 040 2 Surface
M ounted capacitor (10 0nF)
100pF Chip Capacitor
Groun d co nnectio n
User app licatio n
5 0 Ohms line
50 Ohm s line
Us er app licatio n
Bill of Materials
• All RF tracks should be 50Ω characteristic material.
• Capacitor, 100pF, chip capacitor.
• Capacitor, 100nF, 0402.
Rev A1 DS090609
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 6
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FMA3058-000SQ Related Products

FMA3058-000SQ FMA3058-000
Description Wide Band Low Power Amplifier, 2000MHz Min, 20000MHz Max, 1 Func, GAAS, ROHS COMPLIANT PACKAGE-7 Wide Band Low Power Amplifier, 2000MHz Min, 20000MHz Max, 1 Func, GAAS, ROHS COMPLIANT PACKAGE-7
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
package instruction DIE OR CHIP DIE OR CHIP
Reach Compliance Code compliant compliant
Other features LOW NOISE LOW NOISE
Characteristic impedance 50 Ω 50 Ω
structure COMPONENT COMPONENT
Gain 12 dB 12 dB
Maximum input power (CW) 20 dBm 20 dBm
Number of functions 1 1
Maximum operating frequency 20000 MHz 20000 MHz
Minimum operating frequency 2000 MHz 2000 MHz
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -55 °C -55 °C
Encapsulate equivalent code DIE OR CHIP DIE OR CHIP
power supply 5 V 5 V
RF/Microwave Device Types WIDE BAND LOW POWER WIDE BAND LOW POWER
technology GAAS GAAS

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