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ZC5800E

Description
0.015 A, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size108KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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ZC5800E Overview

0.015 A, SILICON, SIGNAL DIODE

SOT23 SCHOTTKY BARRIER DIODES
ISSUE 2 – MARCH 1995

7
ZC2800E
ZC2811E
ZC5800E
2
DIODE PIN CONNECTION
1
PARTMARKING DETAIL
ZC2800E – E6
ZC2811E – E8
ZC5800E – E9
!
3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Power Dissipation at T
amb
= 25°C
Operating and Storage Temperature Range
SYMBOL
P
tot
T
j
:T
stg
VALUE
330
-55 to +150
UNIT
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Breakdown Voltage
TYPE
ZC2800E
ZC2811E
ZC5800E
ZC2800E
ZC2811E
ZC5800E
ZC2800E
ZC2811E
ZC5800E
ZC2800E
ZC2811E
ZC5800E
ZC2800E
ZC2811E
ZC5800E
ZC2800E
ZC2811E
ZC5800E
SYMBOL
V
BR
MIN. TYP. MAX. UNIT CONDITIONS.
70
15
50
200
100
200
410
410
410
15
20
15
2.0
1.2
2.0
100
100
100
V
V
V
nA
nA
nA
mV
mV
mV
mA
mA
mA
pF
pF
pF
ps
ps
ps
I
R
=10
µ
A
V
R
=50V
V
R
=10V
V
R
=35V
I
F
=1mA
Reverse Leakage
Current
Forward Voltage
I
R
V
F
Forward Current
I
F
V
F
=1V
Capacitance
C
T
V
R
=0 V, f=1MHz
f= 54 MHz
I
pk
= 20mA
Effective Minority
Lifetime (1)
(1) Sample Test.
τ
3 - 313

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