ZVN2120A datasheet, PDF - EEWORLD Datasheet

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ZVN2120A: DescriptionSMALL SIGNAL, FET; Categorysemiconductor Discrete semiconductor; File Size82KB，3 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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ZVN2120A Overview

SMALL SIGNAL, FET

ZVN2120A Parametric

Parameter Name	Attribute value
state	ACTIVE
Transistor type	Universal small signal

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Obsolete. Alternative is

ZVN0124A.

N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94

FEATURES

* 200 Volt V

* R

DS(on)

= 10Ω

ZVN2120A

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

tot

stg

VALUE

200

180

700

-55 to +150

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Drain-Source Breakdown

Voltage

Gate-Source Threshold

Voltage

Gate-Body Leakage

Zero Gate Voltage Drain

Current

On-State Drain Current(1)

SYMBOL MIN.

DSS

GS(th)

GSS

DSS

200

100

500

100

MAX.

UNIT CONDITIONS.

µA

Ω

≈25V,

=250mA

=25 V, V

=0V, f=1MHz

=1mA, V

=0V

ID=1mA, V

= V

=± 20V, V

=0V

=200V, V

=160V, V

=0V,

T=125°C

(2)

=25V, V

=10V

=10V,I

=250mA

=25V,I

=250mA

D(on)

Static Drain-Source On-State R

DS(on)

Resistance (1)

Forward Transconductance

(1)(2)

Input Capacitance (2)

Common Source Output

Capacitance (2)

Reverse Transfer

Capacitance (2)

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

iss

oss

rss

d(on)

d(off)

(1) Measured under pulsed conditions. Width=300µs. Duty cycle

≤2%

(2) Sample test.

3-368

(

ZVN2120A Related Products

	ZVN2120A	ZVN2120ASTZ
Description	SMALL SIGNAL, FET	MOSFET N-CH 200V 0.18A TO92-3

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