PD - 94659A
AUTOMOTIVE MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
IRF2807Z
IRF2807ZS
IRF2807ZL
D
HEXFET
®
Power MOSFET
V
DSS
= 75V
R
DS(on)
= 9.4mΩ
S
Description
Specifically designed for Automotive applications,
this HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
I
D
= 75A
TO-220AB
IRF2807Z
D
2
Pak
IRF2807ZS
TO-262
IRF2807ZL
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Max.
89
63
75
350
170
1.1
± 20
160
200
See Fig.12a,12b,15,16
-55 to + 175
Units
A
c
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
c
W
W/°C
V
mJ
A
mJ
°C
i
d
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
h
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
–––
Max.
0.90
–––
62
40
Units
°C/W
Junction-to-Ambient (PCB Mount, steady state)
j
HEXFET
®
is a registered trademark of International Rectifier.
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1
09/03/03
IRF2807Z/S/L
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
75
–––
–––
2.0
67
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.073
7.5
–––
–––
–––
–––
–––
–––
71
19
28
18
79
40
45
4.5
7.5
3270
420
240
1590
280
440
–––
–––
9.4
4.0
–––
20
250
200
-200
110
29
42
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
Conditions
V V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 53A
V V
DS
= V
GS
, I
D
= 250µA
S V
DS
= 25V, I
D
= 53A
µA V
DS
= 75V, V
GS
= 0V
V
DS
= 75V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 20V
V
GS
= -20V
nC I
D
= 53A
V
DS
= 60V
V
GS
= 10V
ns V
DD
= 38V
I
D
= 53A
R
G
= 6.2Ω
V
GS
= 10V
nH Between lead,
D
f
f
f
6mm (0.25in.)
from package
G
S
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 60V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 60V
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
46
80
89
A
350
1.3
69
120
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 53A, V
GS
= 0V
T
J
= 25°C, I
F
= 53A, V
DD
= 25V
di/dt = 100A/µs
f
S
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.12mH,
R
G
= 25Ω, I
AS
= 53A, V
GS
=10V. Part not
recommended for use above this value.
I
SD
≤
53A, di/dt
≤
420A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D
2
Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
2
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IRF2807Z/S/L
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
BOTTOM
10
BOTTOM
1
10
4.5V
0.1
4.5V
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
1000
1
0.1
1
20µs PULSE WIDTH
Tj = 175°C
10
100
1000
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
150
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current
(Α)
100
T J = 175°C
125
T J = 25°C
100
75
T J = 175°C
10
T J = 25°C
1
50
VDS = 25V
20µs PULSE WIDTH
0.1
4
6
8
10
12
25
0
0
25
50
75
100
125
150
VGS, Gate-to-Source Voltage (V)
ID,Drain-to-Source Current (A)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
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3
IRF2807Z/S/L
100000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
12.0
ID= 53A
10.0
VDS= 60V
VDS= 38V
VDS= 15V
10000
C, Capacitance(pF)
Ciss
1000
8.0
6.0
Coss
Crss
4.0
100
2.0
10
1
10
100
0.0
0
10
20
30
40
50
60
70
80
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
TJ = 175°C
10
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
10msec
1
T J = 25°C
VGS = 0V
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-to-Drain Voltage (V)
0.1
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF2807Z/S/L
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
90
80
ID, Drain Current (A)
Limited By Package
ID = 53A
VGS = 10V
2.0
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
1.5
1.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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