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IRF7495TR

Description
7.3 A, 100 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
CategoryDiscrete semiconductor    The transistor   
File Size601KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRF7495TR Overview

7.3 A, 100 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA

IRF7495TR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeSOIC
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)180 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)7.3 A
Maximum drain current (ID)7.3 A
Maximum drain-source on-resistance0.022 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMS-012AA
JESD-30 codeR-PDSO-G8
JESD-609 codee0
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2.5 W
Maximum pulsed drain current (IDM)58 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD - 94683C
IRF7495
HEXFET
®
Power MOSFET
Applications
l
High frequency DC-DC converters
V
DSS
100V
R
DS(on)
max
22m @V
GS
= 10V
:
I
D
7.3A
Benefits
l
Low Gate to Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
S
S
S
G
1
2
3
4
8
7
A
A
D
D
D
D
6
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 100°C
I
DM
P
D
@T
A
= 25°C
dv/dt
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
100
± 20
7.3
4.6
58
2.5
0.02
7.3
-55 to + 150
Units
V
A
c
Maximum Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
W
W/°C
V/ns
°C
h
Storage Temperature Range
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount)
Typ.
Max.
20
50
Units
°C/W
e
–––
–––
Notes

through
†
are on page 8
www.irf.com
1
04/12/06
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