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IRF9383MTRPBF

Description
22 A, 30 V, 0.0029 ohm, P-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size294KB,10 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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IRF9383MTRPBF Overview

22 A, 30 V, 0.0029 ohm, P-CHANNEL, Si, POWER, MOSFET

IRF9383MTRPBF Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage30 V
Processing package descriptionHALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeChipCARRIER
surface mountYes
Terminal formNO
terminal coatingMATTE Tin
Terminal locationBOTTOM
Packaging MaterialsUNSPECIFIED
structureSingle WITH BUILT-IN diode
Shell connectionDRAIN
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeP channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current22 A
Maximum drain on-resistance0.0029 ohm
Maximum leakage current pulse180 A
IRF9383MPbF
DirectFET
®
P-Channel Power MOSFET
‚
Applications
l
Isolation Switch for Input Power or Battery Application
l
High Side Switch for Inverter Applications
Typical values (unless otherwise specified)
V
DSS
Q
g tot
67nC
V
GS
Q
gd
29nC
R
DS(on)
Q
gs2
9.4nC
R
DS(on)
Q
oss
59nC
-30V max ±20V max 2.3mΩ@-10V 3.8mΩ@-4.5V
Features and Benefits
l
Environmentaly Friendly Product
l
RoHs Compliant Containing no Lead,
Q
rr
315nC
V
gs(th)
-1.8V
no Bromide and no Halogen
l
Common-Drain P-Channel MOSFETs Provides
High Level of Integration and Very Low RDS(on)
S
D
G
S
D
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

SQ
SX
ST
MQ
MX
MT
MP
MC
DirectFET™ ISOMETRIC
Description
The IRF9383MTRPbF combines the latest HEXFET
®
P-Channel Power MOSFET Silicon technology with the advanced DirectFET
®
packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET
®
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance
by 80%.
Orderable part number
IRF9383MTRPbF
IRF9383MTR1PbF
Package Type
DirectFET Medium Can
DirectFET Medium Can
Parameter
Standard Pack
Form
Quantity
Tape and Reel
4800
Tape and Reel
1000
Note
"TR1" suffix EOL notice #264
Max.
Units
V
Absolute Maximum Ratings
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
12
Typical RDS(on) (mΩ)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
g
e
e
f
-VGS, Gate-to-Source Voltage (V)
-30
±20
-22
-17
-160
-180
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
20
40
60
80
A
10
8
6
4
2
0
2
4
6
8
10
ID = -22A
ID= -18A
VDS= -24V
VDS= -15V
VDS= -6.0V
TJ = 125°C
T J = 25°C
12
14
16
18
20
100 120 140 160 180
-VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:

Click on this section to link to the appropriate technical paper.
‚
Click on this section to link to the DirectFET Website.
ƒ
Surface mounted on 1 in. square Cu board, steady state.
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
„
T
C
measured with thermocouple mounted to top (Drain) of part.
…
Repetitive rating; pulse width limited by max. junction temperature.
1
www.irf.com
© 2014 International Rectifier
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February 28, 2014

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