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IRFR4104TRLPBF

Description
Advanced Process Technology
CategoryDiscrete semiconductor    The transistor   
File Size196KB,13 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRFR4104TRLPBF Overview

Advanced Process Technology

IRFR4104TRLPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-252AA
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
Other featuresAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)145 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (Abs) (ID)42 A
Maximum drain current (ID)42 A
Maximum drain-source on-resistance0.0055 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)140 W
Maximum pulsed drain current (IDM)480 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD - 94728
AUTOMOTIVE MOSFET
IRFR4104
IRFU4104
HEXFET
®
Power MOSFET
D
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
V
DSS
= 40V
G
S
R
DS(on)
= 5.5mΩ
I
D
= 42A
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
D-Pak
IRFR4104
I-Pak
IRFU4104
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
I
DM
Max.
119
84
42
480
140
Units
A
™
P
D
@T
C
= 25°C Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
E
AS
(Tested )
W
W/°C
V
mJ
A
mJ
d
0.95
± 20
I
AR
E
AR
T
J
T
STG
Avalanche Current
Ù
h
145
310
See Fig.12a, 12b, 15, 16
-55 to + 175
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
y
y
Typ.
Max.
1.05
40
110
Units
°C/W
i
–––
–––
–––
HEXFET
®
is a registered trademark of International Rectifier.
www.irf.com
1
7/17/03
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