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IN916

Description
0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-35
Categorysemiconductor    Discrete semiconductor   
File Size217KB,3 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
Download Datasheet Parametric Compare View All

IN916 Overview

0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-35

IN916 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionDO-35, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingMATTE Tin
Terminal locationAXIAL
Packaging MaterialsUNSPECIFIED
structuresingle
Shell connectionisolation
Diode component materialssilicon
Maximum power consumption limit0.5000 W
Diode typeSignal diode
Maximum reverse recovery time0.0040 us
Maximum repetitive peak reverse voltage100 V
Maximum average forward current0.2000 A
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
HIGH SPEED SILICON SWITCHING DIODE
IN914, B
IN916
250mW
DO- 35
Glass Axial Package
FEATURES
Intended for General Purpose Application.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
V
R
Reverses Voltage ( Continuous)
V
RRM
Repetitive Peak Reverse Voltage
Average Forward Current
T
A
=25ºC
I
F (AV)
I
F (AV)
T
A
=150ºC
I
F
Forward Current (D.C.)
I
FRM
Repetitive Peak Forward Current
Non Repetitive Peak Surge Current
I
FSM
tp=1sec
P
tot
Power Dissipation
T
stg
Storage Temperature
T
amb
Operating ambient Temperature
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
V
F
Forward Voltage
I
F
=10
IN914/916
I
F
=100mA,
1N914B
I
F
=5mA,
Reverse Breakdown Voltage
Reverse Current
V
(BR)R
I
R
I
R
=100µA
V
R
= 20V
V
R
= 75V
V
R
= 20V, T
j
=150ºC
VALUE
75
100
75
10
75
225
500
250
-65 to +200
-65 to +175
UNIT
V
V
mA
mA
mA
mA
mA
mW
ºC
ºC
MIN
TYP
MAX
1.0
1.0
0.72
UNIT
V
V
V
V
µA
0.62
100
25
5
Diode Capacitance
Reverse Recovery Time
C
d
t
rr
V
R
=0, f=1MHz
I
F
=10mA to I
R
=10mA
R
L
=100
Measured at I
R
=1mA
I
F
=10mA to I
R
=60mA
R
L
=100
Measured at I
R
=1mA
2.5
8
pF
ns
4
ns
1N914_B_6 Rev031001
Continental Device India Limited
Data Sheet
Page 1 of 3

IN916 Related Products

IN916 1N914 IN914B
Description 0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-35 0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-35 0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-35
Number of terminals 2 2 2
Number of components 1 1 1
Processing package description DO-35, 2 PIN DO-35, 2 PIN DO-35, 2 PIN
Lead-free Yes Yes Yes
EU RoHS regulations Yes Yes Yes
state ACTIVE ACTIVE ACTIVE
packaging shape round round round
Package Size LONG FORM LONG FORM LONG FORM
Terminal form Wire Wire Wire
terminal coating MATTE Tin MATTE Tin MATTE Tin
Terminal location AXIAL AXIAL AXIAL
Packaging Materials UNSPECIFIED UNSPECIFIED UNSPECIFIED
structure single single single
Shell connection isolation isolation isolation
Diode component materials silicon silicon silicon
Maximum power consumption limit 0.5000 W 0.5000 W 0.5000 W
Diode type Signal diode Signal diode Signal diode
Maximum reverse recovery time 0.0040 us 0.0040 us 0.0040 us
Maximum repetitive peak reverse voltage 100 V 100 V 100 V
Maximum average forward current 0.2000 A 0.2000 A 0.2000 A

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