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BD158

Description
PLASTIC MEDIUM POWER SILICON TRANSISTORS
File Size83KB,2 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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BD158 Overview

PLASTIC MEDIUM POWER SILICON TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN PLASTIC MEDIUM POWER SILICON TRANSISTORS
BD157, BD158
TO-126
Designed For Power Output Stages for Television, Radio, Phonograph And
Other Consumer Applications.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Current Continuous
Peak
Base Current
Power Dissipation @ Ta=25 deg C
@ Tc=25 deg C
Derate Above =25 deg C
Operating & Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Case
SYMBOL
VCEO
VCBO
VEBO
IC
IC
IB
PD
BD157
250
275
BD158
300
325
5.0
0.5
1.0
0.25
2.0
20
0.16
-65 to +150
UNIT
V
V
V
A
A
A
W
W
mW/deg C
deg C
Tj, Tstg
Rth (j-c)
6.25
deg C/W
ELECTRICAL CHARACTERISTICS (Tc=25 deg C unless specified)
DESCRIPTION
SYMBOL
TEST CONDITION
IC=1mA, IB=0
IC=100uA, IE=0
IE=1mA, IC=0
VCB=275V, IE=0
VCB=325V, IE=0
VBE=5V,IC=0
IC=50mA,VCE=10V
IC=50mA, IB=5mA
IC=50mA, IB=5mA
IC=10mA, VCE=10V
f=5 MHz
VCB=20V, f=1MHz
BD157
BD158
BD157
BD158
BD157
BD158
MIN
250
300
275
325
5.0
-
-
-
30
-
-
15
MAX
-
-
-
-
-
100
100
100
240
1.0
1.0
-
UNIT
V
V
V
V
V
uA
uA
uA
V
V
MHz
pF
Collector-Emitter Sustaining Voltage
VCEO
Collector-Base Voltage
Emitter Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Current-Gain-Bandwidth Product
Output Capacitance
Continental Device India Limited
VCBO
VEBO
ICBO
IEBO
hFE
VCESAT
VBESAT
ft
Cob
Typ10
Data Sheet
Page 1 of 2

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