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T178N400TOC

Description
Silicon Controlled Rectifier, 178000mA I(T), 400V V(DRM),
CategoryAnalog mixed-signal IC    Trigger device   
File Size603KB,5 Pages
ManufacturerTelefunken Semiconductor GmbH & Co Kg
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T178N400TOC Overview

Silicon Controlled Rectifier, 178000mA I(T), 400V V(DRM),

T178N400TOC Parametric

Parameter NameAttribute value
Objectid101736523
Reach Compliance Codeunknown
ECCN codeEAR99
Nominal circuit commutation break time180 µs
Critical rise rate of minimum off-state voltage400 V/us
Maximum DC gate trigger current150 mA
Maximum DC gate trigger voltage1.4 V
Maximum holding current200 mA
Maximum leakage current25 mA
On-state non-repetitive peak current3000 A
Maximum on-state voltage1.82 V
Maximum on-state current178000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage400 V
surface mountNO
Trigger device typeSCR

T178N400TOC Related Products

T178N400TOC T178N1100TOC
Description Silicon Controlled Rectifier, 178000mA I(T), 400V V(DRM), Silicon Controlled Rectifier, 178000mA I(T), 1100V V(DRM),
Objectid 101736523 101736494
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Nominal circuit commutation break time 180 µs 180 µs
Critical rise rate of minimum off-state voltage 400 V/us 400 V/us
Maximum DC gate trigger current 150 mA 150 mA
Maximum DC gate trigger voltage 1.4 V 1.4 V
Maximum holding current 200 mA 200 mA
Maximum leakage current 25 mA 25 mA
On-state non-repetitive peak current 3000 A 3000 A
Maximum on-state voltage 1.82 V 1.82 V
Maximum on-state current 178000 A 178000 A
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C
Off-state repetitive peak voltage 400 V 1100 V
surface mount NO NO
Trigger device type SCR SCR
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