BR800 - BR810
PRV : 50 - 1000 Volts
Io : 8.0 Amperes
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
SILICON BRIDGE RECTIFIERS
BR10
0.520 (13.20)
0.480 (12.20)
0.158 (4.00)
0.142 (3.60)
AC
0.77 (19.56)
0.73 (18.54)
0.290 (7.36)
0.210 (5.33)
AC
0.052 (1.32)
0.048 (1.22)
0.75 (19.1)
Min.
0.30 (7.62)
0.25 (6.35)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 6.1 grams
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc=50
°
C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at I
F
= 4.0 Amp.
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Ta = 25
°
C
Ta = 100
°
C
SYMBOL
BR800 BR801 BR802 BR804 BR806 BR808 BR810
50
35
50
100
70
100
200
140
200
400
280
400
8.0
600
420
600
800
560
800
1000
700
1000
UNIT
Volts
Volts
Volts
Amps.
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
It
V
F
I
R
I
R(H)
R
θ
JC
T
J
T
STG
2
300
160
1.0
10
200
2.5
- 40 to + 150
- 40 to + 150
Amps.
AS
Volts
µA
µ
A
2
°
C/W
°
C
°
C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" THK
(8.2cm.x 8.2cm.x 0.3cm.) Al. Plate. heatsink.
UPDATE : APRIL 23, 1998
RATING AND CHARACTERISTIC CURVES ( BR800 - BR810 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
12
HEAT-SINK MOUNTING, Tc
3.2" x 3.2" x 0.12" THK.
(8.2cm x 8.2cm x 0.3cm) Al.-PLATE
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
300
10
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD OUTPUT
CURRENT AMPERES
250
8
200
T
J
= 50
°
C
6
150
4
100
2
50
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
0
0
25
50
75
100
125
150
175
0
1
2
4
6
10
20
40
60
100
CASE TEMPERATURE, (
°
C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
10
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
REVERSE CURRENT, MICROAMPERES
10
T
J
= 100
°
C
FORWARD CURRENT, AMPERES
10
Pulse Width = 300
µs
1 % Duty Cycle
1.0
1.0
0.1
T
J
= 25
°
C
T
J
= 25
°C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED
REVERSE VOLTAGE, (%)
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE, VOLTS
Embedded System
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