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2N2221

Description
800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
Categorysemiconductor    Discrete semiconductor   
File Size146KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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2N2221 Overview

800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18

2N2221 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum on-time20 ns
Maximum off time213 ns
Maximum collector current0.8000 A
Maximum Collector-Emitter Voltage30 V
Processing package descriptionTO-18, 3 PIN
stateDISCONTINUED
packaging shaperound
Package Sizecylindrical
Terminal formWire
Terminal locationBOTTOM
Packaging MaterialsMetal
structuresingle
Shell connectionCOLLECTOR
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Maximum ambient power consumption0.5000 W
Transistor typeUniversal small signal
Minimum DC amplification factor50
Rated crossover frequency250 MHz
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR SWITCHING TRANSISTORS
2N2221
2N2222
TO-18
Metal Can Package
Switching and Linear Application DC and VHF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
2N2221, 22
V
CEO
30
Collector Emitter Voltage
V
CBO
Collector Base Voltage
60
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @Ta=25ºC
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
V
EBO
I
C
P
D
P
D
T
j
, T
stg
5
800
500
2.28
1.2
6.85
-65 to +200
UNIT
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Leakage Current
BV
CEO
BV
CBO
BV
EBOf
I
CBO
I
C
=10mA,I
B
=0
I
C
=10µA.I
E
=0
I
E
=10µA, I
C
=0
V
CB
=50V, I
E
=0
VALUE
MIN
MAX
30
60
5
10
10
0.4
1.6
1.3
2.6
UNIT
V
V
V
nA
µA
V
V
V
V
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
V
CB
=50V, I
E
=0
Ta=150 º C
V
CE(Sat)
* I
C
=150mA,I
B
=15mA
I
C
=500mA,I
B
=50mA
V
BE(Sat)
* I
C
=150mA,I
B
=15mA
I
C
=500mA,I
B
=50mA
0.6
Continental Device India Limited
Data Sheet
Page 1 of 4

2N2221 Related Products

2N2221 2N2222
Description 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
Number of terminals 3 3
Transistor polarity NPN NPN
Maximum on-time 20 ns 20 ns
Maximum off time 213 ns 213 ns
Maximum collector current 0.8000 A 0.8000 A
Maximum Collector-Emitter Voltage 30 V 30 V
Processing package description TO-18, 3 PIN TO-18, 3 PIN
state DISCONTINUED DISCONTINUED
packaging shape round round
Package Size cylindrical cylindrical
Terminal form Wire Wire
Terminal location BOTTOM BOTTOM
Packaging Materials Metal Metal
structure single single
Shell connection COLLECTOR COLLECTOR
Number of components 1 1
transistor applications switch switch
Transistor component materials silicon silicon
Maximum ambient power consumption 0.5000 W 0.5000 W
Transistor type Universal small signal Universal small signal
Minimum DC amplification factor 50 50
Rated crossover frequency 250 MHz 250 MHz

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