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2N2907A

Description
60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18
Categorysemiconductor    Discrete semiconductor   
File Size103KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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2N2907A Overview

60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18

2N2907A Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum on-time45 ns
Maximum off time100 ns
Maximum Collector-Emitter Voltage60 V
Processing package descriptionTO-18, 3 PIN
stateCONSULT MFR
packaging shaperound
Package Sizecylindrical
Terminal formWire
Terminal locationBOTTOM
Packaging MaterialsMetal
structuresingle
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Maximum ambient power consumption0.4000 W
Transistor typeUniversal small signal
Minimum DC amplification factor100
Rated crossover frequency200 MHz
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR SWITCHING TRANSISTORS
2N2906A
2N2907A
TO-18
Switching And Linear Application DC to VHF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
2N2906A, 07A
UNIT
V
V
V
mA
mW
mW/deg C
W
mW/deg C
deg C
VCEO
60
Collector -Emitter Voltage
VCBO
60
Collector -Base Voltage
VEBO
5.0
Emitter -Base Voltage
IC
600
Collector Current Continuous
PD
400
Power Dissipation @Ta=25 degC
2.28
Derate Above 25deg C
PD
1.8
@ Tc=25 degC
10.3
Derate Above 25deg C
Tj, Tstg
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter-Base Voltage
Collector-Cut off Current
SYMBOL
VCEO*
VCBO
VEBO
ICBO
TEST CONDITION
IC=10mA,IB=0
IC=10uA.IE=0
IE=10uA, IC=0
VCB=50V, IE=0
VALUE
MIN
MAX
60
-
60
-
5.0
-
-
10
UNIT
V
V
V
nA
Base Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Ta=150 deg C
VCB=50V, IE=0
ICEX
VCE=30V, VBE=0.5V
IB
VCE=30V, VBE=0.5V
VCE(Sat)* IC=150mA,IB=15mA
IC=500mA,IB=50mA
VBE(Sat) * IC=150mA,IB=15mA
IC=500mA,IB=50mA
-
-
-
-
-
-
2N2906A
>40
>40
>40
40-120
>40
10
50
50
0.4
1.6
1.3
2.6
2N2907A
>75
>100
>100
100-300
>50
uA
nA
nA
V
V
V
V
DC Current Gain
hFE
IC=0.1mA,VCE=10V
IC=1mA,VCE=10V
IC=10mA,VCE=10V
IC=150mA,VCE=10V*
IC=500mA,VCE=10V*
Continental Device India Limited
Data Sheet
Page 1 of 3

2N2907A Related Products

2N2907A 2N2906A
Description 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18
Number of terminals 3 3
Transistor polarity PNP PNP
Maximum on-time 45 ns 45 ns
Maximum off time 100 ns 300 ns
Maximum Collector-Emitter Voltage 60 V 60 V
Processing package description TO-18, 3 PIN HERMETIC SEALED, METAL CAN-3
state CONSULT MFR ACTIVE
packaging shape round ROUND
Package Size cylindrical CYLINDRICAL
Terminal form Wire WIRE
Terminal location BOTTOM BOTTOM
Packaging Materials Metal METAL
structure single SINGLE
Number of components 1 1
Transistor component materials silicon SILICON
Maximum ambient power consumption 0.4000 W 0.5000 W
Transistor type Universal small signal GENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor 100 40
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